High Power Diode Lasers - Center for Biomedical Optics and New ...

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Layers growth : 2 kinds of epitaxy MBE : Molecular Beam Epitaxy MOCVD : Metallo-Organic Chemical Vapor Deposition Molecules fluxes, with ≠ rates Gas fluxes, with ≠ rates Wafer en rotation 400-500° Dissociated molecules Unused gas Rotating wafer ∼ 650° Liquid or solid sources Gas sources
Layers growth : 2 kinds of epitaxy MBE : Molecular Beam Epitaxy MOCVD : Metallo-Organic Chemical Vapor Deposition slow growth : good controle of the interfaces quality atomic layers. ultravacuum (10 -10 Torr) Controle in-situ of the thicknesses of the layers (diffraction X) A usual laser diode = 6h Quantum cascade laser diode = 40h Machines : Riber, Varian (en salle blanche)…. No phosphide. faster growth : layers thicker 50-70 nm (no quantum cascade laser). under weak pressure or ambiant pressure. A usual laser diode = 5-6h Machines : Aixtron (white room)…. phosphore allowed. organo-métallic = gas giving elements III ( Triméthyl In, Ga, Al…) Arsine (As), phosphine (P), Silane (Si) : toxiques 1 epitaxy machine = a small truck
Page 1 and 2: Bio-Photonics ’03 Summer School H
Page 3 and 4: How is a laser diode Max. size : 3
Page 5 and 6: Which material system for which wav
Page 7: substrate Schematic of the growth o
Page 11 and 12: Process Three steps of the planar p
Page 13 and 14: And electrical wires soldering …
Page 15 and 16: The laser diode : assymetric device
Page 17 and 18: • power measurement : high diverg
Page 19 and 20: • far-field measurement Laser dio
Page 21 and 22: W(z) = W W(z) 0 ⎛ 1+ ⎜ ⎜ ⎝
Page 23 and 24: • Catastrophic optical mirror dam
Page 25 and 26: Fabrication •Materials • Epitax
Page 27 and 28: Fabrication •Materials • Epitax
Page 29 and 30: Why a high brightness laser diode a
Page 31 and 32: 12 11 10 CW optical power records d
Page 33 and 34: In the parallel direction : 2 main
Page 35 and 36: The broad-area laser 100 µm large
Page 37 and 38: The ridge laser 5 µm large * 2mm l
Page 39 and 40: Others solutions to improve the bri
Page 43 and 44: Semiconductor amplifier and refract
Page 47 and 48: Between the broad-area laser and th
Page 49 and 50: Index guided tapered lasers bar Min
Page 51 and 52: • Tapered laser bars coupled in a
Page 53 and 54: Beam shaping technique General prin
Page 55 and 56: Beam shaping technique Schematic op
Page 57 and 58: ars at 808-980 nm On the laser diod
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Results with broad-area lasers - FB
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Results with tapered lasers - FBH 6
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CeramOptec GmbH Medical application
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CeramOptec GmbH Application Test of
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CeramOptec GmbH Application Test of
Page 69 and 70:
Application Test of 975 nm system C
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