High Power Diode Lasers - Center for Biomedical Optics and New ...
High Power Diode Lasers - Center for Biomedical Optics and New ...
High Power Diode Lasers - Center for Biomedical Optics and New ...
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Layers growth : 2 kinds of epitaxy<br />
MBE : Molecular Beam Epitaxy<br />
MOCVD : Metallo-Organic<br />
Chemical Vapor Deposition<br />
slow growth : good controle of the<br />
interfaces quality atomic layers.<br />
ultravacuum (10 -10 Torr)<br />
Controle in-situ of the thicknesses of the<br />
layers (diffraction X)<br />
A usual laser diode = 6h<br />
Quantum cascade laser diode = 40h<br />
Machines : Riber, Varian (en salle<br />
blanche)….<br />
No phosphide.<br />
faster growth : layers thicker 50-70 nm<br />
(no quantum cascade laser).<br />
under weak pressure or ambiant pressure.<br />
A usual laser diode = 5-6h<br />
Machines : Aixtron (white room)….<br />
phosphore allowed.<br />
organo-métallic = gas giving elements III<br />
( Triméthyl In, Ga, Al…)<br />
Arsine (As), phosphine (P), Silane (Si) :<br />
toxiques<br />
1 epitaxy machine = a small truck
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