Universidad Nacional Autónoma de México - CNyN

1st International Symposium on Nanoscience and Nanomaterials
emission, and a broad peak centered around 517 nm (2.4 eV), the typical green-yellow luminescence, related
to an unintentional doped n-type ZnO.
P-009
SYNTHESIS AND CHARACTERIZATION OF TANTALUM CARBONITRIDE (TaC x N y ) THIN
FILMS
Vargas Bautista Mónica 1,a , W. de la Cruz 2,b , G. Soto 3,c , M. Farías 4,d , H. Castillo 5,e , G. Navarrete 6,f
1,6 Centro de Investigación Científica y de Educación Superior de Ensenada, CICESE, Carretera Ensenada-
Tijuana No. 3918, Zona Playitas, C.P. 22860, Ensenada, B.C. Mexico.
1,2,3,4 Centro de Nanociencias y Nanotecnología, UNAM, Km. 107 Carretera Tijuana-Ensenada, Ensenada C.P.
22860, B.C., Mexico
5 CETYS, Av. CETYS Universidad s/n Fracc. El Lago, C.P. 22550, Tijuana B.C., México,
a monik@cnyn.unam.mx, b wencel@cnyn.unam.mx, c gerardo@cnyn.unam.mx, d mario@cnyn.unam.mx,
e harvi.castillo@cetys.mx, f g navarre@cicese.mx
Keywords: tantalum nitride; tantalum carbide; tantalum carbonitride; reactive DC magnetron sputtering;
AES; XRD; XPS.
In this work, a series of samples of TaC x N y thin films were prepared using a reactive DC magnetron
sputtering system. The films were deposited on Si (111) wafers. Initially, tantalum nitride (TaN y ) and
tantalum carbide (TaC x ) thin films were grown at room temperature in an atmosphere of Ar/N 2 or Ar/CH 4
mixture, respectively. The nitrogen or carbon content (y = [N]/[Ta] or x = [C]/[Ta]), change between 0 and 1
for a corresponding variation in reactive gas flow, i.e. 0 sccm to 10 sccm for nitrogen or 0 sccm to 4 sccm for
methane. By this method is possible to achieve sub-, over- and stoichiometric films at different reactive gas
flows. A series of stoichiometric TaN and TaC films were deposited at different substrate temperature up to
773 K. The TaC x N y films were subsequently produced at room temperature introducing simultaneously the
reactive nitrogen/methane gas ratio during sputtering in an argon atmosphere. The reactive methane gas flow
was kept constant at 4 sccm and the reactive nitrogen gas flow was varying from 2 to 10 sccm. All the
samples of TaC x N y obtained by this experimental procedure were grown at 773 K. The composition of the
TaN y , TaC x and
TaC x N y films produced were analyzed by Auger Electron Spectroscopy (AES). The
composition was dependent on the reactive gas flow and the growth temperature. The crystalline structure of
the films was determined by X-Ray Diffraction (XRD). Also, X-ray Photoelectron Spectroscopy (XPS) was
used to study the binding energies of the transition Ta 4f7/2.
P-010
MICROWAVE-ASSISTED SYNTHESIS OF ZnXCd1-XS SEMICONDUCTOR NANOPARTICLES
ON MORDENITE
Humberto Villavicencio García 1,a , Oscar Eugenio Jaime-Acuña 2,b , Vitalii Petranovskii 3,c , Oscar Raymond
Herrera 3,d
1 Dirección Nacional de Informática Educativa del Ministerio de Educación de Cuba, La Habana, Cuba
2 Posgrado en Física de Materiales. Centro de Investigaciones Científicas y de Educación Superior de
Ensenada, Centro de Nanociencias y Nanotecnología, Universidad Nacional Autónoma de México, Ensenada
CP 22860, Baja California, México
3 Centro de Nanociencias y Nanotecnología, Universidad Nacional Autónoma de México, Ensenada, Baja
California, México
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