SERIES PVI-2TE 2-12 µm IR PHOTOVOLTAIC DETECTORS ...
SERIES PVI-2TE 2-12 µm IR PHOTOVOLTAIC DETECTORS ...
SERIES PVI-2TE 2-12 µm IR PHOTOVOLTAIC DETECTORS ...
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<strong>SERIES</strong> PVMI-<strong>2TE</strong>8-<strong>12</strong> µm <strong>IR</strong> <strong>PHOTOVOLTAIC</strong> MULTIPLE JUNCTION <strong>DETECTORS</strong>THERMOELECTRICALLY COOLEDOPTICALLY IMMERSEDSPECTRAL RESPONSE9.00E+088.00E+087.00E+08D*, cmHz1/2/W6.00E+085.00E+084.00E+083.00E+082.00E+08λ, µm1.00E+082 2.5 3 3.5 4 4.5 5 5.5 6 6.5 7 7.5 8 8.5 9 9.5 10 10.5 11 11.5 <strong>12</strong>FEATURESDESCRIPTION• High performance in the long wavelengthrange without LN-cooling• Fast response• No flicker noise• Convenient to use• Wide dynamic range• Compact, rugged and reliable• Low cost• Prompt delivery• Custom design upon requestThe PVMI-<strong>2TE</strong>-n (where n is wavelength λ op , inmicrometers, to which the detector is optimized) seriesphotodetectors are two-stage TE-cooled <strong>IR</strong> photovoltaicdetectors, which have been optically immersed to highrefractive index GaAs or CdZnTe hemispherical orhyperhemispherical lenses. These devices can beoptimized for the maximum performance for longwavelength, large area devices. High performance andstability were achieved by using a newly developedvariable gap semiconductors (HgCdZnTe), optimizedcomposition/doping profiles and improved surfaceprocessing.Standard detectors are available in modified TO-8packages with BaF 2 windows.Other packages and windows are available upon request.See application notes for more details.Custom devices with quadrant cells, multielement arrays,specialized packages, connectors, windows and opticalfilters are available on request.
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