Hitachi Chemical Metal CMP Slurry and Low-K Material

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Cu-CMP Process— Combination of HSG-7000 with HS-C500-X —• Slurry :HS-C500-X• Polisher :Conventional Rotary type Polisher• Structure (Blanket wafer)CuHSG-7000 (300nm)SiBarrier metalCap layerConventional (E = 2.0GPa)HSG-7000 (E = 4.3GPa)Low-kCuNo delamination !Low-k

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Film Properties of HSG series 1)PropertyHSG-7000HSG-R7MethodologyTypePorousNon-Porous—Dielectric constant2.22.8 CV@1MHzYoung’s modulus[GPa]4.34.4Nano-indentation2)Weight loss [%]< 1< 1Isothermal TGA,425ºC, 2hOut-gassing(relative value)0.61TDSCrack Threshold(mm)> 2.51.5—1) Cure conditions : 400 ºC / 30min under N2 atmosphere2) Nano-indenter DCM by MTS

Page 2 and 3: Delaminationdelamination
Page 4: Hitachi Chemical Cu / Low-kIntegrat
Page 7: Advantages of AFPItem Conventional
Page 11: Concepts of HSG-7000HSG-7000RSi OnR

Hitachi Chemical Metal CMP Slurry and Low-K Material

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