Low Noise Avalanche Photodiodes

More documents

Recommendations

Info

APD VendorsVendors Sensitivity V BD (V) D V BD (V/ C) 3DB bandwidth Misc:(dBm)(GHz)JDSU ERM577 -32 40-70 1.8 10nA@ V BD -1.58.5uA/uW@ V BD -1.5Mitsubishi-33 35-75 0.12 1.9FU319SPAAgere-34 45-70 0.07-0.14 2P173AFujitsu-34 50 0.12 2.5FRM5W232BSNova Crystals - 29-32 0.03 Fused InGaAs/SiNVR251NEC 8501 40-80 0.1 3 7nA@0.9 V BDAlcatel 1914 30-75 3.5 70nA@0.9 V BDSensors Unlimited -24 25-42 6 5nA@ V BD -1SU-10ATRMitsubishi-25 20-40 0.05 7FU321SPAJDSU ERM578 -22 20-40 7NEC 4270 -25 16-32 0.02 8 Superlattice APD(k=0.4)Low Noise Avalanche Photodiodes
Ionization - Threshold energyFor ionization:1) energy and momentum conservation2) minimisation of energyImpact ionization schematicdiagramvalence electronholefinal electronEghot electronE thm em hhm s-om lhE g = Band gapE th = Threshold energy‘minimum energy forionization’For parabolic bandsand equal masses,E th = 1.5 E gLow Noise Avalanche Photodiodes
Page 1 and 2: Low Noise AvalanchePhotodiodesJohn
Page 4 and 5: Generic communication systeminputda
Page 6 and 7: Technology ComparisonPhotomultiplie
Page 8 and 9: p-i-n vs. APDComparison of sensitiv
Page 14 and 15: Multiplication processtimeMultiplic
Page 16 and 17: An ideal avalanche photodiodeIphoto
Page 18 and 19: Photodetectors - S/Np-i-n photodiod
Page 20 and 21: McIntyre’s model for electron inj
Page 22 and 23: Ionization CoefficientsPhotomultipl
Page 24: Enhancement of Ionization by MQW’
Page 27 and 28: Multiplication from GaAs p + -i-n +
Page 29 and 30: Excess noise in GaAs n + -i-p + sEx
Page 31 and 32: Excess noise factor in InPExcess no
Page 33 and 34: Local noise model prediction vs. ex
Page 35 and 36: McIntyre Noise ModelProbabilityof i
Page 37 and 38: Monte Carlo Estimation of F• Mult
Page 39 and 40: Distribution of Multiplication for
Page 41 and 42: Excess noise in p + -n diodeshvM e
Page 43 and 44: Simulated excess noise in PN + junc
Page 45 and 46: Effect of temperaturevariation on A
Page 47 and 48: Temperature dependent I-V for 1mm G
Page 49 and 50: Change in V bd with TemperatureBrea
Page 51 and 52: Temperature dependent I-V in thin I
Page 53 and 54: Effect of thinavalanching widthson
Page 55 and 56: APD speed limitations-multiplicatio
Page 57 and 58: APD limitations - frequency respons
Page 59 and 60: Effect of dead space on speed¬ Com
Page 61 and 62:
Carrier speed assumptionsv Monte Ca
Page 63 and 64:
GBP comparisongain-bandwidth produc
Page 65 and 66:
Conclusions★ The excess noise dec
Page 67 and 68:
UV DetectionUV-enhancedSi photodiod
Page 69 and 70:
4H-SiC Device Structures●●2 2 +
Page 71 and 72:
Reverse IV CharacteristicsCurrent (
Page 73 and 74:
Excess Avalanche Noise Characterist
Page 75 and 76:
Conclusions☞ 4H-SiC APD’s APD
Page 77 and 78:
Al 0.8 Ga 0.2 As : A Very Low Exces
Page 79 and 80:
Page 81 and 82:
Page 83 and 84:
show all

Low Noise Avalanche Photodiodes

You also want an ePaper? Increase the reach of your titles

Delete template?

Save as template?