Low Noise Avalanche Photodiodes

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Multiplication CharacteristicsMultiplication factor, M2018161412108642365nm297nm265nm250nm240nm230nmBeveled APDsMultiplication factor, M2018161412108642Reach-Through APDs365nm297nm265nm250nm240nm230nm25 30 35 40 45 50 55 60Reverse bias voltage (V)50 60 70 80 90 100 110 120Reverse bias voltage (V)● M of of > 200 200 measured● M at at various l more disparate for for thicker APD structure● Smaller M from shorter lM h>h M ebe> aLow Noise Avalanche Photodiodes
Excess Avalanche Noise CharacteristicsExcess noise factor, F30252015105Beveled APDs¢ 230 nmk = 0.8˜ 365 nmk = 0.1Excess noise factor, F605040302010Reach-Through APDsk = 2.8 ¢ 230 nm˜ 365 nmk = 0.1510 20 30 40 50Multiplication factor, M5 10 15 20 25 30 35 40 45Multiplication factor, M●●Excess noise measured for for M > 40 40good good quality of of APDs, very very stable avalanche multiplication●●Very low low excess noise of of k = 0.1 0.1 & 0.15 0.15 measured with with 365 365 nm nm light light●●Excess noise from from electron injection (230 (230 nm) nm) gave gave k = 0.8 0.8 & 2.8 2.8Low Noise Avalanche Photodiodes
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Low Noise AvalanchePhotodiodesJohn
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Generic communication systeminputda
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Technology ComparisonPhotomultiplie
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p-i-n vs. APDComparison of sensitiv
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APD VendorsVendors Sensitivity V BD
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Multiplication processtimeMultiplic
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An ideal avalanche photodiodeIphoto
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Photodetectors - S/Np-i-n photodiod
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McIntyre’s model for electron inj
Page 22 and 23: Ionization CoefficientsPhotomultipl
Page 24: Enhancement of Ionization by MQW’
Page 27 and 28: Multiplication from GaAs p + -i-n +
Page 29 and 30: Excess noise in GaAs n + -i-p + sEx
Page 31 and 32: Excess noise factor in InPExcess no
Page 33 and 34: Local noise model prediction vs. ex
Page 35 and 36: McIntyre Noise ModelProbabilityof i
Page 37 and 38: Monte Carlo Estimation of F• Mult
Page 39 and 40: Distribution of Multiplication for
Page 41 and 42: Excess noise in p + -n diodeshvM e
Page 43 and 44: Simulated excess noise in PN + junc
Page 45 and 46: Effect of temperaturevariation on A
Page 47 and 48: Temperature dependent I-V for 1mm G
Page 49 and 50: Change in V bd with TemperatureBrea
Page 51 and 52: Temperature dependent I-V in thin I
Page 53 and 54: Effect of thinavalanching widthson
Page 55 and 56: APD speed limitations-multiplicatio
Page 57 and 58: APD limitations - frequency respons
Page 59 and 60: Effect of dead space on speed¬ Com
Page 61 and 62: Carrier speed assumptionsv Monte Ca
Page 63 and 64: GBP comparisongain-bandwidth produc
Page 65 and 66: Conclusions★ The excess noise dec
Page 67 and 68: UV DetectionUV-enhancedSi photodiod
Page 69 and 70: 4H-SiC Device Structures●●2 2 +
Page 71: Reverse IV CharacteristicsCurrent (
Page 75 and 76: Conclusions☞ 4H-SiC APD’s APD
Page 77 and 78: Al 0.8 Ga 0.2 As : A Very Low Exces
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Low Noise Avalanche Photodiodes

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