Low Noise Avalanche Photodiodes

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Multiplication characteristics in InPMultiplication factors108FujitsuSAM-APDMultiplication, M642w = 0.24mmw = 0.33mmw = 0.48mmw = 0.90mmw = 2.40mmMeasured M e(symbols)e Calculated M e(solide lines)using bulk ionization coefficients00 20 40 60 80 100Reverse bias (V)Low Noise Avalanche Photodiodes
Excess noise factor in InPExcess noise factor, FF(M)15k=2.4Fujitsu SAM APD10k=1decreasing w5k=0.4k=01 10Multiplication, MðððSame symbols as as beforeNoise measured usingwrong (electron) carriertype typeFujitsu SAM-APD givesb/a b/a = 1.4 1.4 \ k eff =eff 0.7 0.7ð Structure with with w = 0.24 0.24gives k eff =eff 0.4 0.4 --muchbetter than than SAM-APDwith with hole hole multiplicationðLow Low noise possible even evenwith with electron injectionwith with thin thin wLow Noise Avalanche Photodiodes
Page 1 and 2: Low Noise AvalanchePhotodiodesJohn
Page 4 and 5: Generic communication systeminputda
Page 6 and 7: Technology ComparisonPhotomultiplie
Page 8 and 9: p-i-n vs. APDComparison of sensitiv
Page 12 and 13: APD VendorsVendors Sensitivity V BD
Page 14 and 15: Multiplication processtimeMultiplic
Page 16 and 17: An ideal avalanche photodiodeIphoto
Page 18 and 19: Photodetectors - S/Np-i-n photodiod
Page 20 and 21: McIntyre’s model for electron inj
Page 22 and 23: Ionization CoefficientsPhotomultipl
Page 24: Enhancement of Ionization by MQW’
Page 27 and 28: Multiplication from GaAs p + -i-n +
Page 29: Excess noise in GaAs n + -i-p + sEx
Page 33 and 34: Local noise model prediction vs. ex
Page 35 and 36: McIntyre Noise ModelProbabilityof i
Page 37 and 38: Monte Carlo Estimation of F• Mult
Page 39 and 40: Distribution of Multiplication for
Page 41 and 42: Excess noise in p + -n diodeshvM e
Page 43 and 44: Simulated excess noise in PN + junc
Page 45 and 46: Effect of temperaturevariation on A
Page 47 and 48: Temperature dependent I-V for 1mm G
Page 49 and 50: Change in V bd with TemperatureBrea
Page 51 and 52: Temperature dependent I-V in thin I
Page 53 and 54: Effect of thinavalanching widthson
Page 55 and 56: APD speed limitations-multiplicatio
Page 57 and 58: APD limitations - frequency respons
Page 59 and 60: Effect of dead space on speed¬ Com
Page 61 and 62: Carrier speed assumptionsv Monte Ca
Page 63 and 64: GBP comparisongain-bandwidth produc
Page 65 and 66: Conclusions★ The excess noise dec
Page 67 and 68: UV DetectionUV-enhancedSi photodiod
Page 69 and 70: 4H-SiC Device Structures●●2 2 +
Page 71 and 72: Reverse IV CharacteristicsCurrent (
Page 73 and 74: Excess Avalanche Noise Characterist
Page 75 and 76: Conclusions☞ 4H-SiC APD’s APD
Page 77 and 78: Al 0.8 Ga 0.2 As : A Very Low Exces
Page 79 and 80: Al 0.8 Ga 0.2 As : A Very Low Exces
Page 81 and 82:
Al 0.8 Ga 0.2 As : A Very Low Exces
Page 83 and 84:
Al 0.8 Ga 0.2 As : A Very Low Exces
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Low Noise Avalanche Photodiodes

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