Low Noise Avalanche Photodiodes
Low Noise Avalanche Photodiodes
Low Noise Avalanche Photodiodes
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Comparison with Si & Al 0.8 Ga 0.2 AsMultiplication factor, MMultiplication factor, M201612844H-SiC20 25 30 35 40 45 50 55 60Reverse bias voltage (V)20161284SiM e365 nm230 nmM hAl 0.8Ga 0.2As0 2 4 6 8 10 12 14Reverse bias voltage (V)Excess noise factor, F12108642k=0.4 k=0.3Si andAl AsAl 0.8Ga 0.2 Ask=0.2k=0.1k=010 20 30 40 50 60 70Multiplication factor, M●●V bdofbdof 4H-SiC is is 10· 10· & 5· 5· of ofSi Si &Al Al 0.8Ga0.8Ga 0.2As0.2As respectively●●M e&e M hcloserh for for Si, Si, Al Al 0.8Ga0.8Ga 0.2As0.2As●●4H-SiClowest excess noise in in aw = 0.1 0.1 mm mm structure<strong>Low</strong> <strong>Noise</strong> <strong>Avalanche</strong> <strong>Photodiodes</strong>
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