Low Noise Avalanche Photodiodes

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Responsivity at Unity Gain, Beveled APDs16014070%10 2Responsivity (mA/W)1201008060402060%50%40%30%20%10%10 110 0250 300 350 400● Similar to to typical 6H-SiCphotodiodes● Responsivity cutoff at at~380 nm nm visible-blind● Peak responsivity of of 144 144mA/W at at 265 265 nm nmquantum efficiency of of ~67%0230 250 270 290 310 330 350 370Wavelength (nm)Low Noise Avalanche Photodiodes
Reverse IV CharacteristicsCurrent (A)Beveled APDs, 160·160mm 2 Reach-Through APDs, 150·150mm 210 -4 297 nm10 -4365297 nm10 nm-5230 nm10 -5365 nm230 nm10 -610 -610 -710 -710 -810 -810 -9Dark10 -9Dark10 -1010 -1110 -120 10 20 30 40 50 60Reverse bias voltage (V)Current (A)●●Avalanche breakdown is is sharp sharp & well-defined at at V bd=bd 58.5V 58.5V & 124.0V 124.0V●●Carriers injected with with 230 230 ~ 365 365 nm nm light light to to initiate initiate multiplication10 -1010 -11●●II phisphis 1 ~ 3 orders orders of of magnitude > II dark dark●●AC AC measurements corroborate DC DC results results0 20 40 60 80 100 120Reverse bias voltage (V)Low Noise Avalanche Photodiodes
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Low Noise AvalanchePhotodiodesJohn
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Generic communication systeminputda
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Technology ComparisonPhotomultiplie
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p-i-n vs. APDComparison of sensitiv
Page 12 and 13:
APD VendorsVendors Sensitivity V BD
Page 14 and 15:
Multiplication processtimeMultiplic
Page 16 and 17:
An ideal avalanche photodiodeIphoto
Page 18 and 19:
Photodetectors - S/Np-i-n photodiod
Page 20 and 21: McIntyre’s model for electron inj
Page 22 and 23: Ionization CoefficientsPhotomultipl
Page 24: Enhancement of Ionization by MQW’
Page 27 and 28: Multiplication from GaAs p + -i-n +
Page 29 and 30: Excess noise in GaAs n + -i-p + sEx
Page 31 and 32: Excess noise factor in InPExcess no
Page 33 and 34: Local noise model prediction vs. ex
Page 35 and 36: McIntyre Noise ModelProbabilityof i
Page 37 and 38: Monte Carlo Estimation of F• Mult
Page 39 and 40: Distribution of Multiplication for
Page 41 and 42: Excess noise in p + -n diodeshvM e
Page 43 and 44: Simulated excess noise in PN + junc
Page 45 and 46: Effect of temperaturevariation on A
Page 47 and 48: Temperature dependent I-V for 1mm G
Page 49 and 50: Change in V bd with TemperatureBrea
Page 51 and 52: Temperature dependent I-V in thin I
Page 53 and 54: Effect of thinavalanching widthson
Page 55 and 56: APD speed limitations-multiplicatio
Page 57 and 58: APD limitations - frequency respons
Page 59 and 60: Effect of dead space on speed¬ Com
Page 61 and 62: Carrier speed assumptionsv Monte Ca
Page 63 and 64: GBP comparisongain-bandwidth produc
Page 65 and 66: Conclusions★ The excess noise dec
Page 67 and 68: UV DetectionUV-enhancedSi photodiod
Page 69: 4H-SiC Device Structures●●2 2 +
Page 73 and 74: Excess Avalanche Noise Characterist
Page 75 and 76: Conclusions☞ 4H-SiC APD’s APD
Page 77 and 78: Al 0.8 Ga 0.2 As : A Very Low Exces
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Low Noise Avalanche Photodiodes

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