Low Noise Avalanche Photodiodes

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Multiplication characteristics in SiliconMultiplication factorsMultiplication, M108642w = 0.12mmw = 0.18mmw = 0.32mmw = 0.84mm(n + -i-p + )Measurement of M h andM mix on 0.84mm n + -i-p +Measurement of M e andM mix on 0.32, 0.18,0.12mm p + -i-n + s05 10 15 20 25 30Reverse bias (V)Low Noise Avalanche Photodiodes
Local noise model prediction vs. experiment insubmicron Si p + -i-n + sExcess Noise Factor, F108642F e(M e)blue: M eblack: McIntyre modelk = 0.2k = 02 4 6 8 10Multiplication, M4 Local field noisemodel givesincreasing excessnoise from k = 0.4-0.7 as w decreasesfrom 0.32-0.12mm.4 Experiment showsthat F(M e ) howeveris virtually constantat k » 0.2.Low Noise Avalanche Photodiodes
Page 1 and 2: Low Noise AvalanchePhotodiodesJohn
Page 4 and 5: Generic communication systeminputda
Page 6 and 7: Technology ComparisonPhotomultiplie
Page 8 and 9: p-i-n vs. APDComparison of sensitiv
Page 12 and 13: APD VendorsVendors Sensitivity V BD
Page 14 and 15: Multiplication processtimeMultiplic
Page 16 and 17: An ideal avalanche photodiodeIphoto
Page 18 and 19: Photodetectors - S/Np-i-n photodiod
Page 20 and 21: McIntyre’s model for electron inj
Page 22 and 23: Ionization CoefficientsPhotomultipl
Page 24: Enhancement of Ionization by MQW’
Page 27 and 28: Multiplication from GaAs p + -i-n +
Page 29 and 30: Excess noise in GaAs n + -i-p + sEx
Page 31: Excess noise factor in InPExcess no
Page 35 and 36: McIntyre Noise ModelProbabilityof i
Page 37 and 38: Monte Carlo Estimation of F• Mult
Page 39 and 40: Distribution of Multiplication for
Page 41 and 42: Excess noise in p + -n diodeshvM e
Page 43 and 44: Simulated excess noise in PN + junc
Page 45 and 46: Effect of temperaturevariation on A
Page 47 and 48: Temperature dependent I-V for 1mm G
Page 49 and 50: Change in V bd with TemperatureBrea
Page 51 and 52: Temperature dependent I-V in thin I
Page 53 and 54: Effect of thinavalanching widthson
Page 55 and 56: APD speed limitations-multiplicatio
Page 57 and 58: APD limitations - frequency respons
Page 59 and 60: Effect of dead space on speed¬ Com
Page 61 and 62: Carrier speed assumptionsv Monte Ca
Page 63 and 64: GBP comparisongain-bandwidth produc
Page 65 and 66: Conclusions★ The excess noise dec
Page 67 and 68: UV DetectionUV-enhancedSi photodiod
Page 69 and 70: 4H-SiC Device Structures●●2 2 +
Page 71 and 72: Reverse IV CharacteristicsCurrent (
Page 73 and 74: Excess Avalanche Noise Characterist
Page 75 and 76: Conclusions☞ 4H-SiC APD’s APD
Page 77 and 78: Al 0.8 Ga 0.2 As : A Very Low Exces
Page 83 and 84:
Al 0.8 Ga 0.2 As : A Very Low Exces
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Low Noise Avalanche Photodiodes

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