radiation effects in semiconductor materials and devices for space
radiation effects in semiconductor materials and devices for space
radiation effects in semiconductor materials and devices for space
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CONCLUSIONS‣ Deep submicron CMOS technologies are <strong>radiation</strong> hard <strong>for</strong> total dose <strong>effects</strong>‣STI or BOX must be optimized‣ RILC, RSB, SEGR <strong>and</strong> Latent Damage‣For th<strong>in</strong> gate oxides heavy ion strikes are important‣ Microdose <strong>effects</strong> have to be taken <strong>in</strong>to account requir<strong>in</strong>g a statistical analysis of atechnology‣New process modules, new <strong>materials</strong> <strong>and</strong> alternative device concepts have to be<strong>in</strong>vestigated© IMEC 2010 IEEE EDS Colloquia, June 7 / C. Claeys 24
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