radiation effects in semiconductor materials and devices for space

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GATE OXIDE SCALINGGate current before (full lines) and after (dashed lines) a 67 MeV 2.9x10 12 p/cm 2proton irradiation for a 0.09 µm n- and 0.08 µm p-MOSFET with 2.0 nm oxide.10 -9 -1.5 -1 -0.5 0 0.5 1 1.5Gate Current (A)10 -1010 -1110 -12L=0.09 µm n-MOS; L=0.08 µm p-MOSV DS=-0.025 Vn-MOSp-MOSfloatingV DS=0.025 Vn-MOSp-MOS10 -13t ox=2 nmGate Voltage (V)© IMEC 2010 IEEE EDS Colloquia, June 7 / C. Claeys 8
DEVICE SCALING∆V t ~ t ox2Good TID resistance of the Gate oxideRadiation effects will be caused by parasitic conductionrelated toShallow Trench Isolation oxide: BulkBuried oxide for SOI devicesOccurrence of other radiation related phenomena© IMEC 2010 IEEE EDS Colloquia, June 7 / C. Claeys 9
Page 1 and 2: RADIATION EFFECTS INSEMICONDUCTOR M
Page 3: INTRODUCTIONCOTS important for Spac
Page 6 and 7: IONIZING DAMAGE IN MOSGate: carries
Page 10 and 11: IONIZING DAMAGE: THIN GATE OXIDESUn
Page 12 and 13: ION-INDUCED DEGRADATION OF GATEDIEL
Page 14 and 15: LATENT RADIATION DAMAGE IN THIN GAT
Page 16 and 17: LATENT RADIATION DAMAGE - ION FLUEN
Page 18 and 19: 100 NM PD SOI TECHNOLOGY10-20% CHAN
Page 20 and 21: HEAVY ION STRIKES: MICRODOSE EFFECT
Page 23 and 24: HIGH MOBILITY SUBSTRATESGe DEVICESR
Page 25 and 26: ACKNOWLEDGMENTThe authors want to a

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