Reflection high-energy electron diffraction (RHEED)
Reflection high-energy electron diffraction (RHEED)
Reflection high-energy electron diffraction (RHEED)
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Electrons of KE ~100 eV have shortest IMFP so are most surface sensitiveMay collect- total <strong>electron</strong> yield- Auger <strong>electron</strong> yieldLow signal intensitiesLong data collection time - require UHV to minimize surface contaminationduring data acquisition4.7 Near-Edge X-ray Absorption Fine Structure (NEXAFS orXANES)Fine structure less than ~50 eV from absorption edgeIn EXAFS, interaction between outgoing wave and scatterer strong - singlescattering events dominateIn NEXAFS, interaction between outgoing wave and scatterer weak - multiplescattering events dominateCEM 924 7.16 Spring 2001
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