BFG94 NPN 6 GHz wideband transistor - NXP.com
BFG94 NPN 6 GHz wideband transistor - NXP.com
BFG94 NPN 6 GHz wideband transistor - NXP.com
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<strong>NXP</strong> SemiconductorsProduct specification<strong>NPN</strong> 6 <strong>GHz</strong> <strong>wideband</strong> <strong>transistor</strong><strong>BFG94</strong>FEATURES High power gain Low noise figure Low intermodulation distortion Gold metallization ensuresexcellent reliability.DESCRIPTION<strong>NPN</strong> <strong>transistor</strong> mounted in a plasticSOT223 envelope. It is primarilyintended for use in <strong>com</strong>municationand instrumentation systems.PINNINGPIN DESCRIPTION1 emitter2 base3 emitter4 collectorlfpage 41 2 3Top viewMSB002 - 1Fig.1 SOT223.QUICK REFERENCE DATASYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNITV CBO collector-base voltage open emitter 15 VV CEO collector-emitter voltage open base 12 VI C DC collector current 60 mAP tot total power dissipation up to T s = 140 C (note 1) 700 mWC re feedback capacitance I C = 0; V CE = 10 V; f = 1 MHz 0.8 pFf T transition frequency I C = 45 mA; V CE = 10 V; f = 1 <strong>GHz</strong>; 4 6 <strong>GHz</strong>T amb = 25 CG UM maximum unilateral power gain I C = 45 mA; V CE = 10 V; f = 1 <strong>GHz</strong>; 11.5 13.5 dBT amb = 25 CV O output voltage I C = 45 mA; V CE = 10 V; 500 mVd im = 60 dB; R L = 75 ;f = 800 MHz; T amb = 25 CP L1 output power at 1 dB gain<strong>com</strong>pressionI C = 45 mA; V CE = 10 V; f = 1 <strong>GHz</strong>;T amb = 25 C 21.5 dBmNote1. T s is the temperature at the soldering point of the collector tab.September 1995 2
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