BFG94 NPN 6 GHz wideband transistor - NXP.com

DISCRETE SEMICONDUCTORSDATA SHEETBFG94NPN 6 GHz wideband transistorProduct specification September 1995

NXP SemiconductorsProduct specificationNPN 6 GHz wideband transistorBFG94FEATURES High power gain Low noise figure Low intermodulation distortion Gold metallization ensuresexcellent reliability.DESCRIPTIONNPN transistor mounted in a plasticSOT223 envelope. It is primarilyintended for use in communicationand instrumentation systems.PINNINGPIN DESCRIPTION1 emitter2 base3 emitter4 collectorlfpage 41 2 3Top viewMSB002 - 1Fig.1 SOT223.QUICK REFERENCE DATASYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNITV CBO collector-base voltage open emitter 15 VV CEO collector-emitter voltage open base 12 VI C DC collector current 60 mAP tot total power dissipation up to T s = 140 C (note 1) 700 mWC re feedback capacitance I C = 0; V CE = 10 V; f = 1 MHz 0.8 pFf T transition frequency I C = 45 mA; V CE = 10 V; f = 1 GHz; 4 6 GHzT amb = 25 CG UM maximum unilateral power gain I C = 45 mA; V CE = 10 V; f = 1 GHz; 11.5 13.5 dBT amb = 25 CV O output voltage I C = 45 mA; V CE = 10 V; 500 mVd im = 60 dB; R L = 75 ;f = 800 MHz; T amb = 25 CP L1 output power at 1 dB gaincompressionI C = 45 mA; V CE = 10 V; f = 1 GHz;T amb = 25 C 21.5 dBmNote1. T s is the temperature at the soldering point of the collector tab.September 1995 2

NXP SemiconductorsProduct specificationNPN 6 GHz wideband transistorBFG94LIMITING VALUESIn accordance with the Absolute Maximum System (IEC 134).SYMBOL PARAMETER CONDITIONS MIN. MAX. UNITV CBO collector-base voltage open emitter 15 VV CEO collector-emitter voltage open base 12 VV EBO emitter-base voltage open collector 2 VI C DC collector current 60 mAP tot total power dissipation up to T s = 140 C (note 1) 700 mWT stg storage temperature 65 150 CT j junction temperature 175 CTHERMAL RESISTANCESYMBOL PARAMETER CONDITIONS THERMAL RESISTANCER th j-s thermal resistance from junction to up to T s = 140 C (note 1) 50 K/Wsoldering pointNote1. T s is the temperature at the soldering point of the collector tab.September 1995 3

NXP SemiconductorsProduct specificationNPN 6 GHz wideband transistorBFG94CHARACTERISTICST j = 25 C unless otherwise specified.SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNITI CBO collector cut-off current I E = 0; V CB = 10 V 100 nAh FE DC current gain I C = 30 mA; V CE = 5 V 45 90 I C = 45 mA; V CE = 10 V 100 C c collector capacitance I E = i e = 0; V CB = 10 V; f = 1 MHz 0.9 2 pFC e emitter capacitance I C = i e = 0; V EB = 0.5 V; f = 1 MHz 2.9 4.5 pFC re feedback capacitance I C = i c = 0; V CE = 10 V; f = 1 MHz 0.5 0.8 pFf T transition frequency I C = 45 mA; V CE = 10 V; f = 1 GHz; 4 GHzT amb = 25 CI C = 30 mA; V CE = 5 V; f = 1 GHz; 4 6 GHzT amb = 25 CG UM maximum unilateral power gain I C = 45 mA; V CE = 10 V; f = 1 GHz; 11.5 13.5 dB(note1)T amb = 25 CF minimum noise figure s = opt ; I C = 45 mA; V CE = 10 V; 2.7 dBf = 500 MHz s = opt ; I C = 45 mA; V CE = 10 V; 3 dBf = 1 GHzV O output voltage note 2 500 mVd 2 second order intermodulationdistortionnote 3 51 dBP L1output power at 1 dB gaincompressionI C = 45 mA; V CE = 10 V; R L = 50 ;T amb = 25 C; measured at f = 1 GHzNotes1. G UM is the maximum unilateral power gain, assuming S 12 is zero and2. d im = 60 dB (DIN 45004B, par 6.3: 3-tone); I C = 45 mA; V CE = 10 V; R L = 75 ; T amb = 25 C;V p = V O at d im = 60 dB; f p = 795.25 MHz;V q = V O 6 dB; V r = V O 6 dB;f q = 803.25 MHz; f r = 805.25 MHz;measured at f (p+qr) = 793.25 MHz.3. I C = 45 mA; V CE = 10 V; R L = 75 ; T amb = 25 C;V q = V O = 280 mV;f p = 250 MHz; f q = 560 MHz;measured at f (p+q) = 810 MHz.4. I C = 45 mA; V CE = 10 V; R L = 50 ; T amb = 25 C;f p = 1000 MHz; f q = 1001 MHz;measured at f (2pq) and f (2qp ). 21.5 dBmITO third order intercept point note 4 34 dBmS 212G UM = 10 log---------------------------------------------------------dB.221 – S 11 1 – S 22 September 1995 4

NXP SemiconductorsProduct specificationNPN 6 GHz wideband transistorBFG94+V BB+V CCinput75 Ω1 nFL110 kΩ L2247 ΩL31 nFDUT1 nFoutput75 ΩDUTTESTFIXTUREINPUT SLUG TUNERBIASTEEinput2 pF33 Ω 33 ΩOUTPUT SLUG TUNERBIASTEEoutputMBB780MBB789L1 = L3 = 5 H micro-choke.L2 = 1 turn copper wire (0.4 mm), internal diameter 4 mm.Fig.2Test circuit for second and third orderintermodulation distortion.Fig.3Measurement set-up for third orderintercept point and 1 dB gain compression.800handbook, halfpageP tot(mW)MBB790120handbook, halfpageh FEI (mA)MCD087600804002004000 50 100 150 200Ts (°C)00 10 20 30CV CE = 10 V; T j =25 CFig.4 Power derating curve.Fig.5DC current gain as a function of collectorcurrent.September 1995 5

NXP SemiconductorsProduct specificationNPN 6 GHz wideband transistorBFG941handbook, halfpageC re(pF)0.8MBB7918handbook, halfpagef T(GHz)6MCD0890.640.40.2200 4 8 12 16V CE(V)00 10 20 30 40I C (mA)I C = i c = 0; f = 1 MHz.V CE = 10 V; f = 1 GHz.Fig.6Feedback capacitance as a function ofcollector-emitter voltage.Fig.7Transition frequency as a function ofcollector current.60handbook, halfpageMBB79240handbook, halfpageMBB793G UM(dB)G UM(dB)3040202010040 400 f (MHz) 400001010 2 10 3 10 4f (MHz)I c =45 mA; V CE =10 V.I c =20 mA; V CE =8 V.Fig.8Maximum unilateral power gain as afunction of frequency.Fig.9Maximum unilateral power gain as afunction of frequency.September 1995 6

NXP SemiconductorsProduct specificationNPN 6 GHz wideband transistorBFG9420handbook, halfpageMBB79430handbook, halfpageMBB795G max(dB)15gain(dB)20G max10G UM105010I c =20 mA; V CE =8 V.10 2 10 3 10 4f (MHz)00 10 20 30 40 50IC(mA)V CE = 8 V; f = 1 GHz.G max = maximum available stable gain.G UM = maximum unilateral power gain.Fig.10 Maximum available stable gain as afunction of frequency.Fig.11 Gain as a function of collector current.20handbook, halfpageMBB78220handbook, halfpageMBB781d2(dB)d3(dB)404060608010 30 5070I C (mA)I c =45 mA; V CE = 10 V; f (pq) = 810 MHz.See test circuit, Fig.28010 30 5070I C (mA)I c =45 mA; V CE =10 V; f (pqr) = 793.25 MHz.See test circuit, Fig.2Fig.12 Second order intermodulation distortion asa function of collector current.Fig.13 Third order intermodulation distortion as afunction of collector current.September 1995 7

NXP SemiconductorsProduct specificationNPN 6 GHz wideband transistorBFG944handbook, halfpageF(dB)MCD094f = 2 GHz31 GHz2500 MHz10110IC(mA)10 2V CE =8 V.Fig.14 Minimum noise figure as a function ofcollector current.September 1995 8

NXP SemiconductorsProduct specificationNPN 6 GHz wideband transistorBFG94handbook, full pagewidthstabilitycircle10.2unstable region0.525+ j− j00.20.5F min = 1.80 dB1OPT2 dB251010∞100.22.5 dB3 dB54 dB5 dB0.52I c =15 mA; V CE = 10 V; f = 500 MHz.1Fig.15 Noise circle.MBB788handbook, full pagewidth10.520.25+ j− j00.20.20.5OPTF min = 2.25 dB1 2 5 102.5 dB3 dB3.5 dB4 dB5 dB10∞1050.521MBB787I c =15 mA; V CE = 10 V; f =1 GHz.Fig.16 Noise circle.September 1995 9

NXP SemiconductorsProduct specificationNPN 6 GHz wideband transistorBFG94handbook, full pagewidth50251003 GHz10250+ j010 25 50 100 250∞– j1040 MHz25025100I C =45 mA; V CE =10 V.Z O =50.50MBB784Fig.17 Common emitter input reflection coefficient (S 11 ).handbook, full pagewidth90°120°60°150°30°3 GHz180°0.5 0.4 0.3 0.2 0.140 MHz+ ϕ0°− ϕ150°30°120°60°I C =45 mA; V CE =10 V.90°MBB786Fig.18 Common emitter forward transmission coefficient (S 21 ).September 1995 10

NXP SemiconductorsProduct specificationNPN 6 GHz wideband transistorBFG94handbook, full pagewidth90°120°60°150°40 MHz30°180°50 40 30 20 103 GHz+ ϕ0°− ϕ150°30°120°60°90°MBB785I C =45 mA; V CE =10 V.Fig.19 Common emitter reverse transmission coefficient (S 12 ).handbook, full pagewidth502510010250+ j03 GHz10 25 50 100 250∞– j40 MHz1025025100I C =45 mA; V CE =10 V.Z O =50 .50MBB783Fig.20 Common emitter output reflection coefficient (S 22 ).September 1995 11

NXP SemiconductorsProduct specificationNPN 6 GHz wideband transistorBFG94PACKAGE OUTLINEPlastic surface-mounted package with increased heatsink; 4 leadsSOT223DBEAXcyH Ev MAb 141 23A 1L pQAe 1b pw MBdetail Xe0 2 4 mmscaleDIMENSIONS (mm are the original dimensions)UNIT A A 1 b p b 1 c D E e e 1 H E L p Q v w ymm1.81.50.100.010.800.603.12.90.320.226.76.33.73.34.62.37.36.71.10.70.950.850.20.1 0.1OUTLINEVERSIONREFERENCESIEC JEDEC JEITAEUROPEANPROJECTIONISSUE DATESOT223SC-7304-11-1006-03-16September 1995 12

NXP SemiconductorsProduct specificationNPN 6 GHz wideband transistorBFG94DATA SHEET STATUSDOCUMENT PRODUCTSTATUS (1) STATUS (2)DEFINITIONObjective data sheet Development This document contains data from the objective specification for productdevelopment.Preliminary data sheet Qualification This document contains data from the preliminary specification.Product data sheet Production This document contains the product specification.Notes1. Please consult the most recently issued document before initiating or completing a design.2. The product status of device(s) described in this document may have changed since this document was publishedand may differ in case of multiple devices. The latest product status information is available on the Internet atURL http://www.nxp.com.DEFINITIONSProduct specification The information and dataprovided in a Product data sheet shall define thespecification of the product as agreed between NXPSemiconductors and its customer, unless NXPSemiconductors and customer have explicitly agreedotherwise in writing. In no event however, shall anagreement be valid in which the NXP Semiconductorsproduct is deemed to offer functions and qualities beyondthose described in the Product data sheet.DISCLAIMERSLimited warranty and liability Information in thisdocument is believed to be accurate and reliable.However, NXP Semiconductors does not give anyrepresentations or warranties, expressed or implied, as tothe accuracy or completeness of such information andshall have no liability for the consequences of use of suchinformation.In no event shall NXP Semiconductors be liable for anyindirect, incidental, punitive, special or consequentialdamages (including - without limitation - lost profits, lostsavings, business interruption, costs related to theremoval or replacement of any products or reworkcharges) whether or not such damages are based on tort(including negligence), warranty, breach of contract or anyother legal theory.Notwithstanding any damages that customer might incurfor any reason whatsoever, NXP Semiconductors’aggregate and cumulative liability towards customer forthe products described herein shall be limited inaccordance with the Terms and conditions of commercialsale of NXP Semiconductors.Right to make changes NXP Semiconductorsreserves the right to make changes to informationpublished in this document, including without limitationspecifications and product descriptions, at any time andwithout notice. This document supersedes and replaces allinformation supplied prior to the publication hereof.Suitability for use NXP Semiconductors products arenot designed, authorized or warranted to be suitable foruse in life support, life-critical or safety-critical systems orequipment, nor in applications where failure or malfunctionof an NXP Semiconductors product can reasonably beexpected to result in personal injury, death or severeproperty or environmental damage. NXP Semiconductorsaccepts no liability for inclusion and/or use of NXPSemiconductors products in such equipment orapplications and therefore such inclusion and/or use is atthe customer’s own risk.Applications Applications that are described herein forany of these products are for illustrative purposes only.NXP Semiconductors makes no representation orwarranty that such applications will be suitable for thespecified use without further testing or modification.Customers are responsible for the design and operation oftheir applications and products using NXPSemiconductors products, and NXP Semiconductorsaccepts no liability for any assistance with applications orcustomer product design. It is customer’s soleresponsibility to determine whether the NXPSemiconductors product is suitable and fit for thecustomer’s applications and products planned, as well asfor the planned application and use of customer’s thirdparty customer(s). Customers should provide appropriatedesign and operating safeguards to minimize the risksassociated with their applications and products.September 1995 13

NXP SemiconductorsProduct specificationNPN 6 GHz wideband transistorBFG94NXP Semiconductors does not accept any liability relatedto any default, damage, costs or problem which is basedon any weakness or default in the customer’s applicationsor products, or the application or use by customer’s thirdparty customer(s). Customer is responsible for doing allnecessary testing for the customer’s applications andproducts using NXP Semiconductors products in order toavoid a default of the applications and the products or ofthe application or use by customer’s third partycustomer(s). NXP does not accept any liability in thisrespect.Limiting values Stress above one or more limitingvalues (as defined in the Absolute Maximum RatingsSystem of IEC 60134) will cause permanent damage tothe device. Limiting values are stress ratings only and(proper) operation of the device at these or any otherconditions above those given in the Recommendedoperating conditions section (if present) or theCharacteristics sections of this document is not warranted.Constant or repeated exposure to limiting values willpermanently and irreversibly affect the quality andreliability of the device.Terms and conditions of commercial sale NXPSemiconductors products are sold subject to the generalterms and conditions of commercial sale, as published athttp://www.nxp.com/profile/terms, unless otherwiseagreed in a valid written individual agreement. In case anindividual agreement is concluded only the terms andconditions of the respective agreement shall apply. NXPSemiconductors hereby expressly objects to applying thecustomer’s general terms and conditions with regard to thepurchase of NXP Semiconductors products by customer.No offer to sell or license Nothing in this documentmay be interpreted or construed as an offer to sell productsthat is open for acceptance or the grant, conveyance orimplication of any license under any copyrights, patents orother industrial or intellectual property rights.Export control This document as well as the item(s)described herein may be subject to export controlregulations. Export might require a prior authorization fromnational authorities.Quick reference data The Quick reference data is anextract of the product data given in the Limiting values andCharacteristics sections of this document, and as such isnot complete, exhaustive or legally binding.Non-automotive qualified products Unless this datasheet expressly states that this specific NXPSemiconductors product is automotive qualified, theproduct is not suitable for automotive use. It is neitherqualified nor tested in accordance with automotive testingor application requirements. NXP Semiconductors acceptsno liability for inclusion and/or use of non-automotivequalified products in automotive equipment orapplications.In the event that customer uses the product for design-inand use in automotive applications to automotivespecifications and standards, customer (a) shall use theproduct without NXP Semiconductors’ warranty of theproduct for such automotive applications, use andspecifications, and (b) whenever customer uses theproduct for automotive applications beyond NXPSemiconductors’ specifications such use shall be solely atcustomer’s own risk, and (c) customer fully indemnifiesNXP Semiconductors for any liability, damages or failedproduct claims resulting from customer design and use ofthe product for automotive applications beyond NXPSemiconductors’ standard warranty and NXPSemiconductors’ product specifications.September 1995 14

NXP Semiconductorsprovides High Performance Mixed Signal and Standard Productsolutions that leverage its leading RF, Analog, Power Management,Interface, Security and Digital Processing expertiseCustomer notificationThis data sheet was changed to reflect the new company name NXP Semiconductors, including new legaldefinitions and disclaimers. No changes were made to the technical content, except for package outlinedrawings which were updated to the latest version.Contact informationFor additional information please visit: http://www.nxp.comFor sales offices addresses send e-mail to: salesaddresses@nxp.com© NXP B.V. 2010All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner.The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changedwithout notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any licenseunder patent- or other industrial or intellectual property rights.Printed in The Netherlands R77/02/pp15 Date of release: September 1995