A Delta-Sigma Fractional-N Frequency Synthesizer for Quad ... - JSTS

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272 JAEWOOK SHIN et al : A DELTA-SIGMA FRACTIONAL-N FREQUENCY SYNTHESIZER FOR~N mode, residual quantization noise is slightly observedat around 2 MHz offset. Integrated phase noise is acrucial factor affecting the signal-to-noise ratio in OFDMsignal. The phase noise integrated from 1 kHz to 3.8MHz is measured to be 0.807 degree (-37.0 dBc) and0.910 degree (-35.9 dBc) for the integer-N and fractional-Nmodes, respectively. At lower output frequencies, thephase noise performances become better. For instance, atan output frequency of 500 MHz, the integrated phasenoise is measured to be 0.145 and 0.244 degree for theinteger-N and fractional-N modes, respectively. It successfullymeets the DVB-H requirement of -33 dBc [5]. Meanwhile,the reference and fractional spur are measured to be lowerthan -70 dBc and -50dBc, respectively. The lock time ismeasured to be less than 150 μsec including the 6-bitAFC search time.V. CONCLUSIONSTV Tuner IC for T-DMB/DAB and ISDB-T,”ISSCC Dig. Tech. Papers, pp.614-615, Feb. 2006.[5] P. Antoine et al., “A Direct-Conversion Receiver forDVB-H,” IEEE J. Solid-State Circuits, vol. 40, no. 2,pp. 2536-2546, Dec. 2005.[6] M. Marutani et al., “An 18mW 90 to 770 MHzSynthesizer with Agile Auto-Tuning for Digital TV-Tuners,” ISSCC Dig. Tech. Papers, pp.192-193, Feb.2006.[7] D. Hauspie et al., “Wideband VCO withSimultaneous Switching of Frequency Band, ActiveCore and Varactor Size,” ESSCIRC Dig. Tech.Papers, pp.452-455, Sep. 2006.[8] W. Rhee et al., “A 1.1-GHz CMOS Fractional-NFrequency Synthesizer with 3-bit Third Order Σ-ΔModulator,” IEEE J. Solid-State Circuits, vol. 35,no. 10, pp. 1453-1460, Oct. 2000.A CMOS fractional-N frequency synthesizer to supportthe quadruple bands and multiple standards for mobilebroadcasting systems has been presented. The novellinearized coarse tuned VCO with a pseudo exponentialcapacitor bank structure is proposed to cover the widebandwidth. Implemented in 0.18-μm CMOS technology,the PLL successfully covers 154 ~ 303 MHz (VHF), 462~ 911 MHz (UHF), and 1441 ~ 1887 MHz (L1, L2) withsatisfactory phase noise performances.ACKNOWLEDGMENTSThis work was supported by Seoul Research andBusiness Development Program (GR070039).Jaewook Shin received B.S. andM.S. degrees in department of wirelesscommunications engineering fromKwangwoon University, Seoul, Korea,in 2004 and 2006 respectively. Hehas been a Research Assistant workingtoward the Ph.D. degree at High-Speed Integrated Circuit and System Laboratory (HICSL),Kwangwoon University, since 2007. His current researchis focused on the RF/Analog Integrated Circuits andSystems.REFERENCES[1] I. Vassiliou et al., “A 0.18um CMOS Dual-BandDirect-Conversion DVB-H Receiver,” ISSCC Dig.Tech. Papers, pp.606-607, Feb. 2006.[2] Y. Kim et al., “A Multi-Band Multi-Mode CMOSDirect Conversion DVB-H Tuner,” ISSCC Dig. Tech.Papers, pp.608-609, Feb. 2006.[3] M. Womac et al., “Dual-Band Single-Ended-InputDirect-Conversion DVB-H Receiver,” ISSCC Dig.Tech. Papers, pp.610-611, Feb. 2006.[4] B. Kim et al., “A 100mW Dual-Band CMOS Mobile-Jongsik Kim was born in Korea in1978. He received B.S. and M.S.degree in electrical engineering fromKwangwoon University in 2005 and2007, respectively. He is currentlyworking toward a Ph.D. degree atthe same university. His researchinterests are wide-band transmitter and linearizationmethod for medium power amplifiers in CMOS technology.
JOURNAL OF SEMICONDUCTOR TECHNOLOGY AND SCIENCE, VOL.7, NO.4, DECEMBER, 2007 273Seungsoo Kim was born in Korea in1976. He received B.S. and M.S.degree in electrical engineering fromGunsan University, Gunsan, Korea,in 1998 and Kwangwoon University,Seoul, Korea, in 2004 respectively.He is presently working towards hisPh.D. degree at High-Speed Integrated Circuit andSystem Laboratory (HICSL), Kwangwoon University,since 2004. His current research is the RF/AnalogIntegrated Circuits and Systems in CMOS technology.Hyunchol Shin received B.S., M.S.and Ph.D. degrees in electricalengineering from Korea AdvancedInstitute of Science and Technology(KAIST), Daejon, Korea, in 1991,1993 and 1998, respectively. In 1997,he worked at Daimler Benz ResearchCenter, Ulm, Germany as a doctoral research student.From 1998 to 2000, he was with Samsung Electronics asa Senior RF/Analog IC Design Engineer, where he wasinvolved in the RF/IF chipset development forCDMA/AMPS mobile handsets. In April 2000, he joinedthe Electrical Engineering Department of the Universityof California, Los Angeles as a Postdoctoral ResearchAssociate, where he had worked on RF transceiverdesign using CMOS and SiGe BiCMOS. He also servedas a Lecturer at UCLA teaching Analog ElectronicCircuits for undergraduate students. In May 2002, hejoined Qualcomm RF/Analog IC design group as aSenior Engineer, where he had been involved in thedevelopment of multi-band multi-mode GSM/WCDMAtransceivers. Since September 2003, he has been with theDepartment of Radio Science and Engineering,Kwangwoon University, Seoul, Korea, where he iscurrently an Associate Professor. His research interestsare RF/Analog/Microwave Integrated Circuits andSystems.
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