CLA 100 PD 1200 NA
CLA 100 PD 1200 NA
CLA 100 PD 1200 NA
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<strong>CLA</strong> <strong>100</strong> <strong>PD</strong> <strong>1200</strong> <strong>NA</strong>advancedSymbolDefinitionConditions(di/dt) crcritical rate of rise of currentT VJ =150°Crepetitive, I T = 150 Af = 50 Hz; t P = 200 µsIG = 0.5A;di G /dt = 0.5A/µsV D = ⅔ VDRMnon-repetitive, I T = <strong>100</strong> A(dv/dt) critical rate of rise of voltageV = ⅔ VT =150°CcrV GTgate trigger voltage V = 6 V T = 25 °CRDGKDDRM= ∞; method 1 (linear voltage rise)VJVJT VJ = -40 °CRatingsmin. typ. max.150500<strong>100</strong>0UnitA/µsA/µsV/µs1.5 VI GTgate trigger current V D = 6 V T VJ = 25 °C50 mAT VJ = -40 °C1.6 V<strong>100</strong> mAV GDgate non-trigger voltage V = ⅔ VT VJ = °C0.2 VD DRM 150I GDgate non-trigger current 5 mAI Llatching current t p = 10µsT VJ = 25 °C150 mAIG = 0.5A;di G /dt = 0.5A/µsI Hholding current V D = 6 V R GK = ∞T VJ = 25 °C<strong>100</strong> mAt gdgate controlled delay time V D = ½ VDRMT VJ = 25 °C2 µsIG = 0.5A;di G /dt = 0.5A/µst qturn-off time V R = <strong>100</strong> V; IT = <strong>100</strong> A T VJ = 150 °C150 µsV D = ⅔ VDRM;t p = 200µsdi/dt = 10 A/µs; dv/dt = 20 V/µsIXYS reserves the right to change limits, conditions and dimensions. Data according to IEC 60747and per diode unless otherwise specified20<strong>100</strong>323© 2010 IXYS all rights reserved
SymbolI RMSR thCHM DM TV ISOLDefinitionRMS currentthermal resistance case to heatsinkConditions<strong>CLA</strong> <strong>100</strong> <strong>PD</strong> <strong>1200</strong> <strong>NA</strong>per terminal 150mounting torque 1.1terminal torque 1.1Ratingsmin. typ. max.0.10advancedT stgstorage temperature -40 150 °CWeight30gd Sd Aisolation voltagecreapage distance on surfacestriking distance through airt = 1 secondt = 1 minute30002500841.51.5UnitAK/WNmNmVVmmmmPart numberLogoProduct MarkingabcdeYYWW XXXXXXPart No.<strong>CLA</strong><strong>100</strong><strong>PD</strong><strong>1200</strong>===Thyristor (SCR)High Efficiency Thyristor(up to <strong>1200</strong> V)= Current Rating [A]= Phase leg, high-side Thyristor / low-side Diode= Reverse Voltage [V]<strong>NA</strong> = SOT-227B (minibloc)DateCodeAssembly CodeOrdering Part NameMarking on Product Delivering Mode Base Qty Code KeyStandard <strong>CLA</strong> <strong>100</strong> <strong>PD</strong> <strong>1200</strong> <strong>NA</strong> <strong>CLA</strong><strong>100</strong><strong>PD</strong><strong>1200</strong><strong>NA</strong>Tube 10 509048IXYS reserves the right to change limits, conditions and dimensions. Data according to IEC 60747and per diode unless otherwise specified20<strong>100</strong>323© 2010 IXYS all rights reserved
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