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Philips SemiconductorsHigh-speed diodeProduct specificationBAS316FEATURES• Very small plastic SMD package• High switching speed: max. 4 ns• Continuous reverse voltage:max. 75 V• Repetitive peak reverse voltage:max. 85 V• Repetitive peak forward current:max. 500 mA.DESCRIPTIONThe BAS316 is a high-speed switching diode fabricated in planar technology,and encapsulated in the SOD323 SMD plastic package.handbook, halfpagekaMAM157APPLICATIONS• High-speed switching in e.g.surface mounted circuits.Marking code: A6.Cathode side indicated by a bar.Fig.1 Simplified outline (SOD323) and symbol.LIMITING VALUESIn accordance with the Absolute Maximum Rating System (IEC 134).SYMBOL PARAMETER CONDITIONS MIN. MAX. UNITV RRM repetitive peak reverse voltage − 85 VV R continuous reverse voltage − 75 VI F continuous forward current T s =90°C; note 1; see Fig.2 − 250 mAI FRM repetitive peak forward current − 500 mAI FSM non-repetitive peak forward current square wave; T j =25°C prior tosurge; see Fig.4t=1µs − 4 At=1ms − 1 At=1s − 0.5 AP tot total power dissipation T s =90°C; note 1 − 400 mWT stg storage temperature −65 +150 °CT j junction temperature − 150 °CNote1. T s is the temperature at the soldering point of the cathode tab.1998 Mar 26 2

Philips SemiconductorsHigh-speed diodeProduct specificationBAS31610 5MGA8840.8handbook, halfpageMBG446I R(nA)10 4V R = 75 VC d(pF)0.610 3 max 75 V10 2 25 V0.40.2typ100typ100T (oj C)20000 48 12 16V R(V)f = 1 MHz; T j =25°C.Fig.5Reverse current as a function ofjunction temperature.Fig.6Diode capacitance as a function ofreverse voltage; typical values.1998 Mar 26 5

Philips SemiconductorsHigh-speed diodeProduct specificationBAS316handbook, full pagewidthRS= 50 ΩI FD.U.T.SAMPLINGOSCILLOSCOPEtr10%t ptI Ft rrtV = VRIFx RSRi= 50 ΩMGA881V R90%(1)input signaloutput signal(1) I R = 1 mA.Input signal: reverse pulse rise time t r = 0.6 ns; reverse voltage pulse duration t p = 100 ns; duty factor δ = 0.05;Oscilloscope: rise time t r = 0.35 ns.Fig.7 Reverse recovery voltage test circuit and waveforms.I1 k Ω 450 ΩI90%VR = 50SΩD.U.T.OSCILLOSCOPERi= 50 ΩVfr10%MGA882t rt pttinputsignaloutputsignalInput signal: forward pulse rise time t r = 20 ns; forward current pulse duration t p ≥ 100 ns; duty factor δ≤0.005.Fig.8 Forward recovery voltage test circuit and waveforms.1998 Mar 26 6

Philips SemiconductorsHigh-speed diodeProduct specificationBAS316PACKAGE OUTLINEPlastic surface mounted package; 2 leadsSOD323QAA 1cL pH Ev M A,DA1 2E b p(1)0 1 2 mmscaleDIMENSIONS (mm are the original dimensions)AUNIT A 1 b p c D E H E L Q vmax.p+ 0.05 0.40 0.25mm1.11.8 1.35 2.7 0.45 0.250.20.8 − 0.05 0.25 0.10 1.6 1.15 2.3 0.15 0.15Note1. The marking bar indicates the cathode.OUTLINEVERSIONREFERENCESIEC JEDEC EIAJEUROPEANPROJECTIONISSUE DATESOD323 98-09-141998 Mar 26 7

Philips SemiconductorsHigh-speed diodeProduct specificationBAS316DEFINITIONSData Sheet StatusObjective specification This data sheet contains target or goal specifications for product development.Preliminary specification This data sheet contains preliminary data; supplementary data may be published later.Product specification This data sheet contains final product specifications.Limiting valuesLimiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one ormore of the limiting values may cause permanent damage to the device. These are stress ratings only and operationof the device at these or at any other conditions above those given in the Characteristics sections of the specificationis not implied. Exposure to limiting values for extended periods may affect device reliability.Application informationWhere application information is given, it is advisory and does not form part of the specification.LIFE SUPPORT APPLICATIONSThese products are not designed for use in life support appliances, devices, or systems where malfunction of theseproducts can reasonably be expected to result in personal injury. Philips customers using or selling these products foruse in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from suchimproper use or sale.1998 Mar 26 8

Philips SemiconductorsHigh-speed diodeProduct specificationBAS316NOTES1998 Mar 26 9

Philips SemiconductorsHigh-speed diodeProduct specificationBAS316NOTES1998 Mar 26 10

Philips SemiconductorsHigh-speed diodeProduct specificationBAS316NOTES1998 Mar 26 11

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