12.07.2015 Views

Datasheet Catalog

Datasheet Catalog

Datasheet Catalog

SHOW MORE
SHOW LESS

You also want an ePaper? Increase the reach of your titles

YUMPU automatically turns print PDFs into web optimized ePapers that Google loves.

Philips SemiconductorsHigh-speed diodeProduct specificationBAS316FEATURES• Very small plastic SMD package• High switching speed: max. 4 ns• Continuous reverse voltage:max. 75 V• Repetitive peak reverse voltage:max. 85 V• Repetitive peak forward current:max. 500 mA.DESCRIPTIONThe BAS316 is a high-speed switching diode fabricated in planar technology,and encapsulated in the SOD323 SMD plastic package.handbook, halfpagekaMAM157APPLICATIONS• High-speed switching in e.g.surface mounted circuits.Marking code: A6.Cathode side indicated by a bar.Fig.1 Simplified outline (SOD323) and symbol.LIMITING VALUESIn accordance with the Absolute Maximum Rating System (IEC 134).SYMBOL PARAMETER CONDITIONS MIN. MAX. UNITV RRM repetitive peak reverse voltage − 85 VV R continuous reverse voltage − 75 VI F continuous forward current T s =90°C; note 1; see Fig.2 − 250 mAI FRM repetitive peak forward current − 500 mAI FSM non-repetitive peak forward current square wave; T j =25°C prior tosurge; see Fig.4t=1µs − 4 At=1ms − 1 At=1s − 0.5 AP tot total power dissipation T s =90°C; note 1 − 400 mWT stg storage temperature −65 +150 °CT j junction temperature − 150 °CNote1. T s is the temperature at the soldering point of the cathode tab.1998 Mar 26 2

Hooray! Your file is uploaded and ready to be published.

Saved successfully!

Ooh no, something went wrong!