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Philips SemiconductorsHigh-speed diodeProduct specificationBAS316handbook, full pagewidthRS= 50 ΩI FD.U.T.SAMPLINGOSCILLOSCOPEtr10%t ptI Ft rrtV = VRIFx RSRi= 50 ΩMGA881V R90%(1)input signaloutput signal(1) I R = 1 mA.Input signal: reverse pulse rise time t r = 0.6 ns; reverse voltage pulse duration t p = 100 ns; duty factor δ = 0.05;Oscilloscope: rise time t r = 0.35 ns.Fig.7 Reverse recovery voltage test circuit and waveforms.I1 k Ω 450 ΩI90%VR = 50SΩD.U.T.OSCILLOSCOPERi= 50 ΩVfr10%MGA882t rt pttinputsignaloutputsignalInput signal: forward pulse rise time t r = 20 ns; forward current pulse duration t p ≥ 100 ns; duty factor δ≤0.005.Fig.8 Forward recovery voltage test circuit and waveforms.1998 Mar 26 6
Philips SemiconductorsHigh-speed diodeProduct specificationBAS316PACKAGE OUTLINEPlastic surface mounted package; 2 leadsSOD323QAA 1cL pH Ev M A,DA1 2E b p(1)0 1 2 mmscaleDIMENSIONS (mm are the original dimensions)AUNIT A 1 b p c D E H E L Q vmax.p+ 0.05 0.40 0.25mm1.11.8 1.35 2.7 0.45 0.250.20.8 − 0.05 0.25 0.10 1.6 1.15 2.3 0.15 0.15Note1. The marking bar indicates the cathode.OUTLINEVERSIONREFERENCESIEC JEDEC EIAJEUROPEANPROJECTIONISSUE DATESOD323 98-09-141998 Mar 26 7
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