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Philips SemiconductorsHigh-speed diodeProduct specificationBAS31610 5MGA8840.8handbook, halfpageMBG446I R(nA)10 4V R = 75 VC d(pF)0.610 3 max 75 V10 2 25 V0.40.2typ100typ100T (oj C)20000 48 12 16V R(V)f = 1 MHz; T j =25°C.Fig.5Reverse current as a function ofjunction temperature.Fig.6Diode capacitance as a function ofreverse voltage; typical values.1998 Mar 26 5