LDM3S502D-LC

LDM3S502D-LCAbsolute Maximum RatingsParameter Symbol Unit Min MaxStorage Temperature RangeTso C -40 85Relative Humidity RH % - 85Laser Diode Reverse Voltage VRL V - 20Laser Diode Forward Current IFL mA - 150Monitor Diode Reverse Voltage VRD V - 20Monitor Diode Forward Current IFD mA - 10Lead Solder Temperature -o C - 350Lead Soldering Time - s - 3Recommended Operating ConditionsParameter Symbol Unit Min Typ MaxCase Operating Temperature RangeTco C -40 - 85Operating Voltage Vop V - 1.2 1.5Specifications (Tc=25°C, unless otherwise noted)Parameter Symbol Unit Min Typ Max Test conditionElectrical CharacteristicsForward Voltage Vop V - 1.2 1.5 CW, If =Ith+20mA- 10 15 CWThreshold Current Ith V- - 28 CW, Tc=-40 to 85 o CRise/Fall Time Tr/f ns - 0.15 0.3 Ib=Ith; 10%~90%Monitor Current Im µA 40 - 400 CW, Pop=0.1mW- 0.1 10 CW,VRD=5VMonitor Dark Current Id nA- - 500 CW,VRD=5V, Tc=-40 to 85 o CSeries resistor Rs Ohm - - 12Optical CharacteristicsOptical Output Power Po mW 0.15 - 0.5 CW,If =Ith+20mASlope Efficiency ηd mW/mA 0.007 - 0.03 CWTemperature Dependence ofDifferential EfficiencyCentral Wavelength λc nmWuhan Telecommunication Devices Co., Ltd.http://www.wtd.com.cn∆ηd dB -3.0 -1.2 -ηd(@85 ° C)∆ ηd= 10logη (@ 25 ° C)Tc=-40 to 85 oC1290 1310 1330 CW1270 - 1345 CW, Tc=-40 to 85 o CSpectral Width ∆λ nm - - 2.5 CW, RMSTracking Error ∆Pf dB -1.5 - +1.5CW, Tc=-40 to 85 o CIm=const@Pf(If=30mA,Tc=25 o C)d2