switching characteristics of pin diode using different ... - ijater

International Journal of Advanced Technology & Engineering Research (IJATER)www.ijater.com tan 1 ( )2 0.25a 1( ) cos 2L2b a tan2 tan 2 22cotha1 cot b cotb1 coth a12 cot b 1coth acoth a 1cot2b 20.52 0.25221 cotha cot b3C-SiC 800 300 207.2 77.7The variation of total resistance of p-i-n diode with frequency(0.1MHz – 30GHz) for three different semiconductors (3C-SiC,GaAs,Si) are shown in fig2 – fig4.In each case has beencalculated at 1mA forward biased current consideringW=0.12mils and Q=8.4C………………………………… (5)Figure1. The p-i-n diode, showing i- region and the junctionregionsNow in the p-i-n diode the normalized resistance can be definedasR 2R( f )TRj 1 ………………………………… (6)iRiFigure2. Total resistance of 3C-SiC p-i-n diode at 1mAforward current versus frequency.Based on equations (1)-(6) the resistance of p-i-n diode has beenestimated considering the forward bias current as 1 mA. Theanalysis of resistance in p-i-n diode has been carried out usingSi, GaAs and 3C-SiC as semiconductor material and thecalculated resistances at higher frequencies using these threedifferent materials are compared. The p-i-n diode resistancedepends on i- region characteristics and geometry which havebeen analyzed using different W/L ratio.TABLE I: Parameters of different semiconductorMaterialMobility ofElectrons(µ n)cm 2sMobilityofHoles(µ p)cm 2sDiffusionconstant ofElectrons(D n)2cmv sDiffusionconstant ofHoles(D p )2cmv sSi 1350 12.4 25 480GaAs 8500 400 220 10.4Figure3. Total resistance of Ga-As p-i-n diode at 1mAforward current versus frequency.ISSN No: 2250-3536 Volume 3, Issue 1, Jan. 2013 20

International Journal of Advanced Technology & Engineering Research (IJATER)www.ijater.com3. Result and AnalysisThe p-i-n switch shows that irrespective of base material it canoffer better switching action. In SiC the off resistance is highercompare to GaAs and Si where as the band gap energy, meltingtemperature and other properties of SiC are more suitable for itsapplication as SPST switch at higher frequency (~30 GHz ormore). The normalized resistance of switch shows that (W/L)ratio has an important contribution to control the resistancecharacteristics. This is also evident from equation (6). With thediffusion length increase the resistance become low but thetransition of switch is not sharp compare to higher value of(W/L).This p-i-n diode can be used at higher frequency (~35 GHz) asSPST switch in Radar, Missile technology where number ofIMPATT diodes are connected and the SPST switch controlsthem.Figure4. Total resistance of Si p-i-n diode at 1mA forwardcurrent versus frequency.Figure5. The normalized resistance for 3C-SiC p-i-n diodeversus frequency-lifetime product fτ.Among these three materials SiC is WBG semiconductors andoffers better applications at microwave frequencies [7,8,9] thusthe normalized resistance of p-i-n diode has been calculated forSiC material only. The variation of normalized resistance as afunction of fτ is shown in fig.5 for different values of W/L.4. REFERENCES[1] Caverly,R.,Hiller, G., “Microwave resistance ofGallium Arsenide and Silicon p-i-n Diode”, IEEEMTT-S Digest,1987[2] A. Iturri-Hinojosa, L.M Resendize, and T.VTorchynska, “Numerical Analysis of the Performanceof p-i-n Diode Microwave Switches Based onDifferent Semiconductor Materials”,Int.J.pureAppl.sci,Technology,2010.[3] Emmanull Gated, et.al., “An improved physics- BasedFormulation of the Microwave p-i-n diodeimpedance”, IEEE microwave and Wirelesscomponents Letters, Vol.17. No.3, March 2007.[4] D.Leenov, “The Silicon p-i-n dode as a microwaverader protector at megawatt levels”, IEEE Trans.Electron Devices, Vol. ED-11, no.2, PP.53-61, Feb.1964.[5] R.H. Caverly and G. Hiller “The small signal acimpedance of gallium arsenide and silicon p-i-ndiode”, solid state electron, Vol.33, no.10, PP.1255-1263,1990.[6] Size, S.M., “Physics of Semiconductor Devices”, JhonWilly and Sons, New York, 1989.[7] M.Ray Kanjilal, D.Ghosh, M. Mukherjee, “Studies ofElectrical Characteristics of MESFET Using WBG IV-IV SiC AS Potential Substrate Material”, IJSAT, Vol2 no 6, PP. 71 – 76, June 2012.ISSN No: 2250-3536 Volume 3, Issue 1, Jan. 2013 21

International Journal of Advanced Technology & Engineering Research (IJATER)www.ijater.com[8] Alicja Konczakowska, Jacek Cichosk, D. Dokupil,P.Flisikowski, “ The Low Frequency Noise Behaviourof SiC MESFETs”, 21 st International Cnoferrence onNoise and Fluctation, IEEE, 2011.[9] J.W. Milligan, J.Henning, S.T. Allen, A.Ward, P.Parikh, R.P.Smith, “ Transition of SiC MESFETTechnology”, Cree, Inc., 4600 Silicon Drive, Durham,NC27703.BiographiesABHIJIT KUNDU received the B.Tech &M.tech degree in Electronics and Communication Engineeringfrom the University of W.B.U.T, Kolkata, West Bengal, in 2007&2010 respectively.Currently, He is an Assistant Professor of Electronics andCommunication Engineering of Abacus Institute of Engineering &Management, West Bengal, India. His teaching and research areasinclude Microwave Engineering, Electro Magnetic Theory, SolidState Devices. Abhijit Kundu (Assistant Professor) may bereached at abhijituday@yahoo.co.inDR. MAITREYI RAY KANJILAL is atpresent Professor and Head in department ofElectronics and Communication Engineeringat Narula Institute of Technology, Kolkata,West Bengal, India. She has a wide teachingexperience since 1998 in the colleges underC.U, Asansol engineering College, NarulaInstitute of Technology. She was also Head ofthe Department ECE and EIE departments at Techno IndiaCollege of Technology, Kolkata, India. She has received thePh.D from The University of Calcutta in the Year 2000. She isassociated with different universities for various academicactivities and also a life member of IETE, ISTE and Professionalmember of IEEE (USA), IEEE-ED society (USA), IEEE-MTTs(USA). Her field of interest in research is low and highfrequency semiconductor devices and their applications,microelectronics and VLSI. Dr Ray Kanjilal is also the author ofthree books namely – Basic Electrical and ElectronicEngineering- Vol - 1 (Kolkata, West Bengal, JB Book andLearning, 2010), Basic Electrical and Electronic Engineering-Vol - 2 (Kolkata, West Bengal, JB Book and Learning, 2011)and Analog Electronic Circuits (Kolkata, West Bengal, JB Bookand Learning, 2012) and she has also reviewed books publishedby Pearson-Prentice Hall and Tata Mc Hill. Dr. Maitreyi RayKanjilal may be reached at mr.kanjilal@gmail.com.DR. MOUMITA MUKHERJEE hasreceived M.Sc. degree in Physics withspecialization in Electronics andCommunication and Ph.D. (Tech) inRadio Physics and Electronics fromUniversity of Calcutta, India. During June2003 to June 2010, she worked first as aSenior Research Fellow (SRF) and then as a Research Associateof Defence Research and Development Organization (DRDO),Ministry of Defence, New Delhi, India. She is presently workingas „Scientist –B‟ (Sr. Assistant Prof.) at CMSDS, a centre ofDRDO and University of Calcutta.Her research interest is focused on the modeling/simulation andfabrication of Millimeter and Sub-millimeter (Terahertz) wavehigh power homo-junction/hetero-junction devices based onwide-band-gap semiconductors, photonics, nano-scale THzdevices. She is the principal author of more than 100 peerreviewedresearch papers on semiconductor devices in reputedInternational refereed journals and reviewed IEEE-Proceedings.She is the author of 8 invited international book-chapters andworked as a Chief Editor of 2 books published from UK. Dr.Mukherjee is the „Technical-Reviewer” of a number of reputedinternational journals in India and abroad. Dr. Mukherjee hasreceived a number of international awards by Int. BiographicalCentre, IBC, UK, American Biographical Centre, USA, andMarque‟s Who‟s Who, USA. She has received “IEEE BestPaper Award” two times in 2009 and 2010. Dr. Mukherjee is themember of IEEE (USA), IEEE-ED society (USA), IEEE-MTTs(USA) and Indian Science Congress. Dr. Moumita Mukherjeemay be reached at moumita_phys@yahoo.comDAMAYANTI GHOSH is associated asAssistant Professor with the department ofElectronics and Communication Engineeringat Narula Institute of Technology,Kolkata,India. She has received the M.Tech degree inRadio Physics and Electronics CU in 2009.She has published few papers on MESFETand her area of interest is high frequencydevices like MESFET, HEMT, IMPATT etc. Damayanti Ghoshmay be reached at ghoshdamayanti@rediffmail.comISSN No: 2250-3536 Volume 3, Issue 1, Jan. 2013 22