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Construction of Iso-contours, Bisectors and Voronoi Diagrams on ...

Construction of Iso-contours, Bisectors and Voronoi Diagrams on ...

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IEEE TRANSACTIONS ON PATTERN ANALYSIS AND MACHINE INTELLIGENCE, VOL. 33, NO. 8, PAGE 1502-1517, AUGUST 2011 14Fig. 24. Four simulated point patterns <strong>on</strong> a 2-manifold model. Top: top views <str<strong>on</strong>g>of</str<strong>on</strong>g> color-mapped distance field. Bottom:<str<strong>on</strong>g>Vor<strong>on</strong>oi</str<strong>on</strong>g> diagrams <str<strong>on</strong>g>of</str<strong>on</strong>g> sample points. From left to right: uniform sampling, r<str<strong>on</strong>g>and</str<strong>on</strong>g>om sampling, small cluster sampling(µ = 12, ω = 8) <str<strong>on</strong>g>and</str<strong>on</strong>g> big cluster sampling (µ = 40, ω = 20).box <str<strong>on</strong>g>of</str<strong>on</strong>g> the model. The plots <str<strong>on</strong>g>of</str<strong>on</strong>g> precisi<strong>on</strong> versus recall<str<strong>on</strong>g>of</str<strong>on</strong>g> the six approaches are shown in Fig. 23, from whichwe c<strong>on</strong>clude that our vor<strong>on</strong>oi-skelet<strong>on</strong> matching (V-SKEL), D2 shape distributi<strong>on</strong> [18] <str<strong>on</strong>g>and</str<strong>on</strong>g> bending invariantsignature G2 [14] are robust to noise, while geometricmoment invariants GMT [68], extended Gaussian imagesEGI [25] <str<strong>on</strong>g>and</str<strong>on</strong>g> spin images [26] are more sensitive to noise.This can be interpreted by that noises heavily change thenormals <str<strong>on</strong>g>and</str<strong>on</strong>g> areas <str<strong>on</strong>g>of</str<strong>on</strong>g> models, <str<strong>on</strong>g>and</str<strong>on</strong>g> GMT uses integral <str<strong>on</strong>g>of</str<strong>on</strong>g>area <str<strong>on</strong>g>and</str<strong>on</strong>g> EGIs <str<strong>on</strong>g>and</str<strong>on</strong>g> spin images use normals.6.3 Point Pattern Analysis <strong>on</strong> MThe <str<strong>on</strong>g>Vor<strong>on</strong>oi</str<strong>on</strong>g> diagrams <strong>on</strong> triangulated 2-manifolds Mcan also be used to examine whether or not a pattern existsin a set <str<strong>on</strong>g>of</str<strong>on</strong>g> sampling points <strong>on</strong> M. The sampling mayrepresent the populati<strong>on</strong> <str<strong>on</strong>g>of</str<strong>on</strong>g> a state (geography), artefactsin a site (archaeology), subcellular localizati<strong>on</strong> in tissues(biology), etc. Using the <str<strong>on</strong>g>Vor<strong>on</strong>oi</str<strong>on</strong>g> diagram c<strong>on</strong>structi<strong>on</strong>algorithm proposed in this paper, the polyg<strong>on</strong>al basedmethod in [64] can be extended to the domain <str<strong>on</strong>g>of</str<strong>on</strong>g> 2-manifold surfaces M.We use the following methods to generate differentpoint patterns <strong>on</strong> M:• R<str<strong>on</strong>g>and</str<strong>on</strong>g>om point sampling. An array A is generated withthe number <str<strong>on</strong>g>of</str<strong>on</strong>g> triangles in M, i.e., A[i] corresp<strong>on</strong>dsto the triangle t i . Each element in A stores the triangleareas accumulated so far, i.e., A[i] = ∑ ij=1 ∆t j,where ∆t j is the area <str<strong>on</strong>g>of</str<strong>on</strong>g> triangle t j . A r<str<strong>on</strong>g>and</str<strong>on</strong>g>omnumber generator is used to sample between 0 <str<strong>on</strong>g>and</str<strong>on</strong>g>A[n]. Each generated number x corresp<strong>on</strong>ds to asample point <strong>on</strong> M which lies in the triangle t k withA[k − 1] < x ≤ A[k].• Uniform point sampling. The farthest point samplingmethod <strong>on</strong> M presented in Secti<strong>on</strong> 6.1 is used.• Clustering point sampling. First the cluster originso i are r<str<strong>on</strong>g>and</str<strong>on</strong>g>omly distributed. Sec<strong>on</strong>dly a numbermeasure uniform r<str<strong>on</strong>g>and</str<strong>on</strong>g>om small cluster big clusterpattern pattern pattern patternARF 0.7614 0.6926 0.6542 0.6311RF H 0.5512 0.5106 0.5404 0.5371AD 0.6835 0.4573 0.1244 −1.2184TABLE 4The mean <str<strong>on</strong>g>of</str<strong>on</strong>g> three measures in ten simulati<strong>on</strong>s for thefour different point patterns in Figure 24.measure uniform r<str<strong>on</strong>g>and</str<strong>on</strong>g>om small cluster big clusterpattern pattern pattern patternARF 0.0055 0.007 0.0122 0.0172RF H 0.0341 0.0412 0.0526 0.0547AD 0.0465 0.0451 0.182 0.3757TABLE 5The st<str<strong>on</strong>g>and</str<strong>on</strong>g>ard deviati<strong>on</strong> <str<strong>on</strong>g>of</str<strong>on</strong>g> three measures in tensimulati<strong>on</strong>s for the four different point patterns.<str<strong>on</strong>g>of</str<strong>on</strong>g> points are generated for each cluster i from ar<str<strong>on</strong>g>and</str<strong>on</strong>g>om distributi<strong>on</strong> with mean µ. Thirdly the pointsin a cluster i are distributed according to a Gaussianfuncti<strong>on</strong> centered at o i <str<strong>on</strong>g>and</str<strong>on</strong>g> with st<str<strong>on</strong>g>and</str<strong>on</strong>g>ard deviati<strong>on</strong>ω.Four patterns (<strong>on</strong>e r<str<strong>on</strong>g>and</str<strong>on</strong>g>om, <strong>on</strong>e uniform, two clusterdistributi<strong>on</strong>s with different µ, ω) are generated in a 2-manifold model <str<strong>on</strong>g>and</str<strong>on</strong>g> shown in Figure 24. We generatethe <str<strong>on</strong>g>Vor<strong>on</strong>oi</str<strong>on</strong>g> diagrams for different point samples. Foreach <str<strong>on</strong>g>Vor<strong>on</strong>oi</str<strong>on</strong>g> cell V C(p i ), denote its area by A(i) <str<strong>on</strong>g>and</str<strong>on</strong>g>its perimeter by L(i). Three measures are defined below(ARF <str<strong>on</strong>g>and</str<strong>on</strong>g> RF H are adopted from [64]) to test thepattern in the sampling:ARF = 1 nn∑RF (i),i=1RF (i) = 4πA(i)L 2 (i)

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