HigH Voltage Pulsed generators - Physical Instruments

Ion induced stress relaxation in cBN
by pulsed ion implantation
Pulse schema of BIAS for quasi stress free cBN coating
RF magnetron sputter equipment with complex BIAS for cBN
deposition
The deposition of cubic boron nitride films as a super
hard coating is very limited by the formation
of extreme high intrinsic stress and the resulting
delamination of the coating from the substrate at
film thicknesses lower 100nm. This high compressive
stress is caused by the low energy (< several
hundreds eV) recoil implantation of film forming
species nitrogen and boron, by densification and
by defect production in the growing films.
At biased rf magnetron sputter processes stress of
more than 10GPa was measured. Under simultaneously
application of a second ion energy (higher
than several keV) it was obtained a 90% stress relaxation
of the growing film by atomic displacements
under the surface. A complex pulsed bias of
the cBN growth with pulse voltages of
� For cBN growth: -100 to -180 V
� For stress relaxation: -2.5 to -8 kV
� For Surface discharge: +80V
(see pulse schema) enables a poor stress growth
process for µm thick cBN hard coatings.
(Forschungszentrum Dresden Rossendorf applied RUP3-10B)
RF plasma of N2/Ar for cBN deposition