HigH Voltage Pulsed generators - Physical Instruments

Reactive MF Pulsed Dual Magnetron
Sputter Deposition of TCO
XRD j-scans of ZnO films grown using the following parameters:
no target presputtering, chemical cleaning of the substrate,
TS=RT, 600 °C; target presputtering, O2 RF plasma pretreatment
of the substrate, TS=550 °C.
Two magnetron sources can be used for investigations
of reactive dual magnetron sputtering processes
in pulsed mode. During the deposition, both
magnetrons are operating in unipolar or bipolar
mode, pulsed in the middle frequency range of
1-50 kHz. The operating power is from 100 W to
several kW possible on each magnetron. Optimization
of pulse frequency and on/off duration is free
programmable. Typical applications are the deposition
of high quality transparent conductive oxides
(ITO, ZnO:Al/AZO) or optical and semiconducting
layers on oxide base (NbO, TaO, TiO 2 a.s.o.).
(Forschungszentrum Dresden Rossendorf applied RUPmag and
RUPmag2)
Reactive O2/Ar plasma for TCO deposition of ZnO:Al