wideband iq demodulator for digital receivers - California Eastern ...

WIDEBAND IQ DEMODULATORFOR DIGITAL RECEIVERSUPC2766GRFEATURESFUNCTIONAL BLOCK DIAGRAM• BROADBAND OPERATIONRF & LO DC to 1 GHzIF (IQ) DC to 100 MHz• WIDEBAND IQ PHASE AND AMPLITUDE MATCHINGAmplitude Matching: ±0.3 dB TypicalPhase Matching: ±0.3° (driven in phase)• AGC DYNAMIC RANGE:30 dB Typical• LOW DISTORTION:30 dBc Typical• SMALL SSOP 20 PACKAGE• TAPE AND REEL PACKAGING AVAILABLEI BiasTrimVCC (IFI)VCC (RF)GND (RF)RFinRFin123456201918171615I outI outGND (IFI )LO (I)LO (I)LO (Q)DESCRIPTIONGND(RF)714LO (Q)The UPC2766GR Silicon MMIC Wideband IQ Demodulatorwas manufactured with the NESAT III MMIC process. TheNESAT III process produces transistors with fT approaching20 GHz. The device was designed specifically for digital videoand data receivers. The IC consists of a wide band RFamplifier, Gain Control amplifier, dual balanced mixers, LObuffers, and I & Q output buffer amplifiers.VAGCVCC (IFQ)Q Bias Trim8910131211GND(IFQ)QoutQoutNEC's stringent quality assurance and test procedures ensurethe highest reliability and performance.ELECTRICAL CHARACTERISTICS 1 (TA = 25°C, VCC = 5 V, ZL = 50 Ω)PART NUMBERUPC2766GRPACKAGE OUTLINE S20 (SSOP 20)SYMBOLS PARAMETERS AND CONDITIONS UNITS MIN TYP MAXICC Circuit Current (no signal) mA 60 78fRF RF Input Bandwidth 2 fIF = 40 MHz, fRF > fLO, 3 dB down MHz DC-750 DC-1000fIF IF Output Bandwidth 3 fRF = 480 MHz, fRF> fLO, 3 dB down, VAGC = 0 V MHz 200CG Conversion Gain dB 15 20 25NF Noise Figure dB 21IM3 3rd Order Intermodulation DistortionfRF1 = 480 MHz, fRF2 = 490 MHz, fLO = 440 MHz, PIN = -20 dBm, VAGC = 1 V dBc 30∆Φ IQ Phase Balance (LO driven in phase) deg ±0.3 ±1.5∆G IQ Amplitude Balance dB ±0.3 ±0.5GAGC AGC Range, VAGC = 0-5 V dB 40 45LO-RF LO to RF Isolation dB 55LO-IF LO to IF Isolation dB 10PSAT Saturated Output Level dBm +2VO Saturated Output Voltage (ZL = 250 Ω//2pF) VP-P 1.2 1.5Notes:1. fRF = 480 MHz, fIF = 40 MHz, PLO = -10 dBm, PRF = -30 dBm, VAGC = 0 V, fRF > fLO unless otherwise specified.2. RF Bandwidth defined as 3 dB down from response at fRF = 40 MHz.3. IF Bandwidth defined as 3 dB down from response at fIF = 10 MHz.

UPC2766GRABSOLUTE MAXIMUM RATINGS 1 (TA = 25°C)SYMBOLS PARAMETERS UNITS RATINGSVCC Supply Voltage V 6PD Power Dissipation 2 mW 430TOP Operating TemperatureRange °C -40 to +85TSTG Storage Temperature °C -55 to +150RECOMMENDEDOPERATING CONDITIONSSYMBOLS PARAMETERS UNITS MIN TYP MAXVCC Supply Voltage V 4.5 5.0 5.5TOP Operating Temperature °C -40 +25 +85Notes:1. Operation in excess of any one of these parameters mayresult in permanent damage.2. Mounted on a 50x50x1.6 mm epoxy glass PWB (TA = 85°C).PIN FUNCTIONSPin Pin Pin Voltage Function and Explanation Equivalent CircuitNo. Name Typ. (V)1 I Trim 4.2 Limiter control for I-IF output12 VCC (IFI) 5.0 Power supply pin of I-Mixer.3 VCC (RF) 5.0 Power supply pin of RF and AGC block.4 GND (RF) 0.0 Ground pin of RF and AGC block.5 RFIN 2.6 RF input pin. For single-endedapplications, Pin 6 should be bypassedto GND via a capacitor.6 RFIN 2.65 6To nextblock7 GND (RF) 0.0 Ground pin of RF and AGC block.8 VAGC 0~5 Gain control pin.• VAGC = 0 V: Maximum Gain• VAGC = 5 V: Maximum Attenuation8VCC9 VCC (IFQ) 5.0 Power supply pin of Q-MixerVCC10 Q Trim 4.2 Limiter control for Q-IF output.10

UPC2766GRPIN FUNCTIONSPin Pin Pin Voltage Function and Explanation Equivalent CircuitNo. Name Typ. (V)11 Qout 3.3 Q-IF output pin. Output impedance is approximately 55 Ω.Output load should be approximately 250 Ω. Pin 11and pin 12 are differential outputs. For single-ended12 Qout 3.3 applications, terminate unused output withequivalent impedance.1112Fromblockbefore+ _13 GND (IFQ) 0.0 Ground pin of Q-IF block.14 LO (Q) 2.2 Oscillator input of Q-Mixer. For single-endedapplications, pin 15 should be bypassed toGND via a capacitor.15 LO (Q) 2.214 1516 LO (I) 2.2 Oscillator input of I-Mixer. For single-endedapplications, pin 16 should be bypassed toGND via a capacitor.17 LO (I) 2.217 1618 GND (IF I) 0.0 Ground pin of I-IF block.19 IOUT 3.3 I-IF output pin. Output impedance is approximately 55 Ω.Output load should be approximately 250 Ω. Pin 19 andpin 20 are differential outputs. For single-ended applications,terminate unused output with equivalent impedance.20 Iout 3.31920Fromblockbefore+ _

UPC2766GRTYPICAL PERFORMANCE CURVES (TA = 25°C unless otherwise specified)30CONVERSION GAIN vs.RF FREQUENCY AND TEMPERATURE30CONVERSION GAIN vs.IF FREQUENCY AND TEMPERATUREConversion Gain, CG (dB)252015105+25˚C-40˚C+85˚CfIF = 40 MHzVAGC = 0 VConversion Gain, CG (dB)252015105fRF = 480 MHzVAGC = 0 V-40˚C+25˚C+85˚C010 100 1000RF Frequency (MHz)030 50 100 300IF Frequency (MHz)5OUTPUT POWER vs. INPUT POWER0OUTPUT POWER AND IM3vs. INPUT POWEROutput Power, POUT (dBm)0-5-10-15-20fRF = 480 MHzfIF = 40 MHzVAGC = 0 VOutput Power and IM3 (dBm)-10-20-30-40-50POUTIM3fRF1 = 480 MHzfRF2 = 490 MHzfLO = 440 MHzVAGC = 1 V-25-40 -30 -20 -10 0 10-60-40 -30 -20 -10 0 10Input Power, PIN (dBm)RF Input Power (dBm)

UPC2766GRTYPICAL PERFORMANCE CURVES (TA = 25°C, fIF = 40 MHz, unless otherwise specified.)5IQ PHASE BALANCE vs.RF FREQUENCY AND TEMPERATURE2IQ AMPLITUDE BALANCEvs. RF FREQUENCYIQ Phase Balance, ∆Φ (°)43210-1-2-3-4+25˚C+85˚C-40˚CIQ Amplitude Balance, ∆G (dB)10-1-510 100 1000-210 100 1000RF Frequency (MHz)RF Frequency (MHz)LO LEAKAGE TO RF PORT vs.LO FREQUENCY AND TEMPERATURE-20PLO = -10 dBm10LO LEAKAGE TO IF PORT vs.LO FREQUENCY AND TEMPERATUREPLO = -10 dBm-300LO Leakage (dBc)-40-50TA = +85˚CTA = +25˚CTA = -40˚CLO Leakage (dBc)-10-20TA = -40˚CTA = +25˚CTA = +85˚C-60-30-700 500 1000-400 500 1000LO Frequency (MHz)LO Frequency (MHz)Third Order Intermodulation Distortion, IM3 (dBc)0-10-20-30-40-50-30THIRD ORDER INTERMODULATIONvs. CONVERSION GAINfRF1 = 480 MHzfRF2 = 490 MHzfLO = 440 MHzPIN = -20 dBm eachPLO = -10 dBm-20 -10 0 10 20Conversion Gain, CG (dB)Third Order Intermodulation Distortion, IM3 (dBc)0-10-20-30-40THIRD ORDER INTERMODULATIONvs. AGC VOLTAGEfRF1 = 480 MHzfRF2 = 490 MHzfLO = 440 MHzPIN = -20 dBm each-500 1 2 3 4 5AGC Voltage, VAGC (V)

UPC2766GRTYPICAL PERFORMANCE CURVES (TA = 25°C)CONVERSION GAIN vs. AGC VOLTAGEConversion Gain, CG (dB)3020100-10-20fRF = 480 MHzfIF = 40 MHzPRF = -30 dBmPLO = -10 dBm-300 1 2 3 4 5AGC Voltage, VAGC (V)TEST CIRCUIT12I-MIX. I-IF Amp.2019300 nH 250Ω250Ω8 pFI out3184I-LOBuffer Amp.17RF IN5RF Pre-Amp.RFAGC16615In PhasePower DividerOSC IN7AGC Cont.Q-LOBuffer Amp.14VAGC813VCC9Q-IF Amp.12250ΩQ-MIX.10 11300 nH250Ω8 pFQ outNotes:1. All capacitors are 1000 pF unless odtherwise noted.2. Low Pass Filter on I and QOUT minimizes LO Leakage.

UPC2766GRAPPLICATION CIRCUIT1I-MIX.20I out2I-IF Amp.19I OUTR1318VCC4I-LOBuffer Amp.17C1LO Input50K(Optional)RF IN56RF Pre-RFAmp.AGC16150.01 µf0.01 µfC2R7AGC Cont.Q-LOBuffer Amp.14RC1C2VAGC813VCC9Q-IF Amp.12Q OUTR1Q-MIX.10 11Q outOUTLINE DIMENSIONS (Units in mm)PACKAGE OUTLINE SSOP 2020 11NECC2766GNotes:1. All capacitors are 1000 pF unless otherwise noted.2. Phase shifter element valuesXC1