3V, 450 MHz SILICON MMIC FREQUENCY CONVERTER California ...
3V, 450 MHz SILICON MMIC FREQUENCY CONVERTER California ...
3V, 450 MHz SILICON MMIC FREQUENCY CONVERTER California ...
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<strong>3V</strong>, <strong>450</strong> <strong>MHz</strong> <strong>SILICON</strong> <strong>MMIC</strong><strong>FREQUENCY</strong> <strong>CONVERTER</strong>UPC2768GRFEATURESINTERNAL BLOCK DIAGRAM• LOW POWER DISSIPATIONVCC = 3 V, Icc = 7 mA• HIGH CONVERSION GAIN80 dBGND120GND• ON CHIP OSCILLATOR OR LO BUFFER:DC - <strong>450</strong> <strong>MHz</strong>GND219GND• OUTPUT LIMITING<strong>450</strong> mVp-pRF INPUT318LO1/VCO1• BROADBAND OPERATIONDC - <strong>450</strong> <strong>MHz</strong>RF BYPASS417LO2/VCO2• POWER SAVE FUNCTIONICC (ps) =
UPC2768GRABSOLUTE MAXIMUM RATINGS 1 (TA = 25°C)SYMBOLS PARAMETERS UNITS RATINGSVCC Supply Voltage V 5PT Power Dissipation 2 mW 433TOP Operating Temperature °C -40 to +85TSTG Storage Temperature °C -55 to +150Note:1. Operation in excess of any one of these parameters mayresult in permanent damage.2. Mounted on a 50x50x1.6 mm epoxy glass PWB (TA = 85°C).RECOMMENDEDOPERATING CONDITIONSSYMBOLS PARAMETERS UNITS MIN TYP MAXVCC Supply Voltage V 2.7 3.0 3.3TOP Operating Temperature °C -40 25 85fIF IF Frequency Range <strong>MHz</strong> DC 25TYPICAL PERFORMANCE CURVES (TA = 25°C, VCC = 3.0 V, VENABLE ≥ 2.5 V unless otherwise specified)CIRCUIT CURRENT vs. SUPPPLY VOLTAGEAND ENABLE VOLTAGECIRCUIT CURRENT vs. SUPPLY VOLTAGEAND ENABLE VOLTAGE(TA = 85°C)Circuit Current, ICC (mA)10.05.0VCC = 4.0VCC = 3.<strong>3V</strong>CC = 3.0VCC = 2.7Circuit Current, ICC (mA)10.05.0VCC = 4.0 VVCC= 3.3 VVCC = 3.0 VVCC = 2.7 V00 1.0 2.0 3.0 4.0Enable Voltage (V)00 1.0 2.0 3.0 4.0Enable Voltage (V)CIRCUIT CURRENT vs. SUPPLY VOLTAGEAND ENABLE VOLTAGE(TA = 40°C)CONVERSION GAIN vs.RF <strong>FREQUENCY</strong> AND TEMPERATURE(DOWN <strong>CONVERTER</strong> ONLY)10.040Circuit Current, ICC (mA)5.0VCC = 4.0VCC = 3.<strong>3V</strong>CC = 3.0VCC = 2.7Conversion Gain (dB)3020PRF = -70 dBmPLO = -10 dBmfIF = 10 <strong>MHz</strong>TA = 25˚CTA = -40˚CTA = 85˚C00 1.0 2.0 3.0 4.000100200 300 400 500 600Enable Voltage (V)RF Frequency (<strong>MHz</strong>)
UPC2768GRTYPICAL PERFORMANCE CURVES (TA = 25°C, VCC = 3.0 V, VENABLE ≥ 2.5 V unless otherwise specified)CONVERSION GAIN VS.IF <strong>FREQUENCY</strong>(DOWN<strong>CONVERTER</strong> ONLY)OUTPUT VOLTAGE vs.INPUT POWER40TA = 25˚CTA = -40˚CTA = 85˚C500Conversion Gain (dB)3020fLO = fRF -fIFPRF = -70 dBmPLO = -10 dBmfRF = <strong>450</strong> <strong>MHz</strong>Output Voltage (mV)400300200100fIN = 10 <strong>MHz</strong>ZL = 2KΩ0 10 20 30 40 50 60-70 -60 -50 -40 -30 -20 -10IF Frequency (<strong>MHz</strong>)Input Power (dBm)LO LEAKAGE vs. <strong>FREQUENCY</strong>RF INPUT MATCH (S11)10PLO = -10 dBm.52Output Power (dBm)-20-40-60Lo-IF LeakageLo-RF Leakage.2-.2.2 .5 1 25-5-.5-2422.815 423.315 423.815LO Frequency (<strong>MHz</strong>)Marker: 315.5 <strong>MHz</strong>Γx = .53Γy = -.67Start 50 <strong>MHz</strong>R = 20.1 ΩX = -100.6 ΩLS = -50.7 nHCS = 5.0 pF-1Stop 500 <strong>MHz</strong>TYPICAL DETECTOR CIRCUIT<strong>3V</strong>82KGND1µFMM33172D DUAL OPAMP43K43KDATA_OUTINMMBD10143K82K20K1500pGNDGNDGNDGND2.2M1µF820KGND
UPC2768GRAPPLICATION CIRCUIT123201918 23SAW*417168 pF335Bias 163.3 µH 25 pF6151. GND2. GND3. RF Input4. RF Bypass5. Mixer IF6. IF Bypass7. IF Input8. Bypass9. N/C10. GND20. GND19. GND18. Lo1/VCO117. Lo2/VCO216. VENABLE15. VCC (D/C)14. VCC (IF)13. IF OUTPUT12. N/C11. GND78914131210.7 <strong>MHz</strong>To Detector* Recommended devices:RF Monolithics RO2125A for 304 <strong>MHz</strong>RF Monolithics RO2102A for 423 <strong>MHz</strong>or equivalent1011All unmarked caps are 1000 pFOUTLINE DIMENSIONS (Units in mm)PACKAGE OUTLINE SSOP 2020 11TYPICAL INPUT MATCHING CIRCUIT3 pole high-pass network provides greater than 20 dB rejection inthe FM band (
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