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New developments in wide bandgap CdZnTe (CZT) semiconductor ...

New developments in wide bandgap CdZnTe (CZT) semiconductor ...

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Charge Charge Collection Collection Efficiency Efficiency<br />

1<br />

0.8<br />

0.6<br />

0.4<br />

0.2<br />

0<br />

0 200 400<br />

Bias Voltage (V)<br />

600<br />

A Dynasil<br />

mte = 6.5 x 10 -3 cm 2 mte = 6.5 x 10 /V<br />

-3 cm 2 /V<br />

Mobility-Lifetime Products<br />

Obta<strong>in</strong>ed Data<br />

Fitt<strong>in</strong>g Data<br />

Sample : #44S-1<br />

Thickness=0.13 cm<br />

-18 degree, 32 ms ms shap<strong>in</strong>g<br />

Charge Collection Efficiency<br />

1<br />

0.8<br />

0.6<br />

0.4<br />

0.2<br />

0<br />

mt h = 4 x 10 -4 cm 2 /V<br />

Obta<strong>in</strong>ed Data<br />

Fitt<strong>in</strong>g Data<br />

0 200 400<br />

Bias Voltage (V)

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