New developments in wide bandgap CdZnTe (CZT) semiconductor ...
New developments in wide bandgap CdZnTe (CZT) semiconductor ...
New developments in wide bandgap CdZnTe (CZT) semiconductor ...
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Correlations of subgra<strong>in</strong> boundaries and X-ray response maps for a 2mm<br />
th<strong>in</strong> detector<br />
Impurities and secondary phases accumulated with<strong>in</strong><br />
subgra<strong>in</strong> boundaries are primary cases for carries<br />
trapp<strong>in</strong>g (known from other <strong>semiconductor</strong>s)<br />
Diffraction topograph<br />
~10x15 mm 2 area, 2-mm thick<br />
Well-def<strong>in</strong>ed<br />
subgra<strong>in</strong> boundary<br />
with a high density<br />
of dislocations<br />
A dark (low response)<br />
band due to trapp<strong>in</strong>g by<br />
impurities, while the dark<br />
spots correspond to Te<br />
<strong>in</strong>clusions<br />
High-resolution X-ray<br />
response map, 10 mm
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