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New developments in wide bandgap CdZnTe (CZT) semiconductor ...

New developments in wide bandgap CdZnTe (CZT) semiconductor ...

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Elim<strong>in</strong>ation of the <strong>in</strong>fluence of the uncollected holes<br />

Electron-only<br />

carrier device<br />

el<br />

col<br />

h<br />

e<br />

Anode<br />

A ~ Q � Q<br />

hol<br />

<strong>in</strong>d<br />

(1) Electrostatic shield<strong>in</strong>g (2) Electronic subtraction<br />

Frisch-grid<br />

ionization<br />

chambers<br />

Virtual Frischgrid<br />

detectors<br />

Spherical,<br />

Hemi-spherical,<br />

Three-term<strong>in</strong>al,<br />

CAPture,<br />

Frisch-r<strong>in</strong>g,<br />

Capacitive Frisch-grid,<br />

Pixel detectors and their<br />

modifications<br />

Coplanar-grid<br />

detectors<br />

Theoretically, all<br />

these designs<br />

should provide<br />

energy resolution<br />

close to its<br />

statistical limit<br />

determ<strong>in</strong>ed by the<br />

Fano-factor (~0.5%<br />

at 662 keV)

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