New developments in wide bandgap CdZnTe (CZT) semiconductor ...
New developments in wide bandgap CdZnTe (CZT) semiconductor ...
New developments in wide bandgap CdZnTe (CZT) semiconductor ...
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Elim<strong>in</strong>ation of the <strong>in</strong>fluence of the uncollected holes<br />
Electron-only<br />
carrier device<br />
el<br />
col<br />
h<br />
e<br />
Anode<br />
A ~ Q � Q<br />
hol<br />
<strong>in</strong>d<br />
(1) Electrostatic shield<strong>in</strong>g (2) Electronic subtraction<br />
Frisch-grid<br />
ionization<br />
chambers<br />
Virtual Frischgrid<br />
detectors<br />
Spherical,<br />
Hemi-spherical,<br />
Three-term<strong>in</strong>al,<br />
CAPture,<br />
Frisch-r<strong>in</strong>g,<br />
Capacitive Frisch-grid,<br />
Pixel detectors and their<br />
modifications<br />
Coplanar-grid<br />
detectors<br />
Theoretically, all<br />
these designs<br />
should provide<br />
energy resolution<br />
close to its<br />
statistical limit<br />
determ<strong>in</strong>ed by the<br />
Fano-factor (~0.5%<br />
at 662 keV)