261.PDF file, full text
261.PDF file, full text
261.PDF file, full text
Create successful ePaper yourself
Turn your PDF publications into a flip-book with our unique Google optimized e-Paper software.
Reduction in dislocation density and strain in GaN thin films grown via maskless pendeo-epitaxy40. C. Kisielowski, J. Kruger, S. Runimov, T. Suski, J.W. AgerIII, E. Jones, Z. Liliental-Weber, M. Ruben, E.R. Weber,M.D. Bremser, and R.F. Davis, “Strain-related phenomenain GaN thin films”, Phys. Rev. B54, 17745–17753 (1996).41. U.T. Schwarz, P.J. Schuck, R.D. Grober, A.M. Roskowski,S. Einfeldt, and R.F. Davis, “Micro-Raman and micro-photoluminescencestudies of strain relaxation in pendeo GaNon SiC”. (to be published)42. P. Perlin, J. Camassel, W. Knap, T. Taliercio, J.C. Chervin, T.Suski, I. Grzegory, and S. Porowski, “Investigation of longitudinal-opticalphonon-plasmon coupled modes in highly conductingbulk GaN”, Appl. Phys. Lett. 67, 2524–2526 (1995).43. F. Bertram, T. Riemann, J. Christen, A. Kaschner, A.Hoffmann, C. Thomsen, K. Hiramatsu, T. Shibata, and N.Sawaki, “Strain relaxation and strong impuritiy incorporationin epitaxial laterally overgrown GaN: direct imaging ofdifferent growth domains by cathodluminescence microscopyand micro-Raman spectroscopy”, Appl. Phys. Lett. 74,359–361 (1999).44. J.W.P. Hsu, M.J. Matthews, D. Abusch-Magder, R.N.Kleiman, D.V. Lang, S. Richter, S.L. Gu, and T.F. Kuech,“Spatial variation of electrical properties in lateral epitaxiallyovergrown GaN”, Appl. Phys. Lett. 79, 761–763(2001).45. C. Kirchner, V. Schwegler, F. Eberhard, M. Kamp, K.J.Ebeling, K. Kornitzer, T. Ebner, K. Thonke, R. Sauer, P.Prystawko, M. Leszczynski, I. Grzegory, and S. Porowski,“Homoepitaxial growth of GaN by metalorganic vapourphase epitaxy: A benchmark for GaN technology”, Appl.Phys. Lett. 75, 1098–1100 (1999).270 Opto-Electron. Rev., 10, no. 4, 2002 © 2002 COSiW SEP, Warsaw