On-Board Type (DC) EMI Suppression Filters (EMIFILr)

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Noise EMI Suppression Effect Effect of VFR/VFS Series
C31E.pdf
08.9.1
!Features (VFS9V)
Items
Overload
Test methods
1.4 times the varistor voltage (V1) is applied for 5 minutes at room
temperature.
Rated values
Surge Test (1)
At room temperature. Surges are applied are
10 5 times every 2 seconds. Then after 1 or 2
hours, the sample is measured.
400V
0.47µF
Items
Rated Capacitance Change
Specifications
WithinT15%
Surge Test (2)
At room temperature. Capacitor
"C" is charged with 70V, then discharged to
apply the voltage to the sample. Tested once
(resuming JASO A-1).
70V
0.8Ω
2Ω
C
C=110mF
Insulation Resistance
Rated of Change
in Varistor Voltage V1*
Voltage Rate
500kΩ min.
WithinT15%
1.30 max.
High
Temperature
Load
At a temperature of 85±3D, the varistor voltage V1 is continuously
applied to the sample for 1000 to 1024 hours.
Then it is left at room temperature, for 4 to 24 hours before measuring.
*V1: Voltage when 1mA is applied
!Pulse-Voltage Breakdown Characteristic (VFS9V)
VFS9V EMIGUARDr use a self healing varistor- capacitor,
so that it can be used under a 500 to 600V surge which
would break conventional disk type EMI filters. As shown in
figure below EMIGUARDr withstands 2000V impulses
applied 1000 times.
50Ω
50Ω
100
VFS9V
Capacitance: 0.022µF
with varistor function
5
Residual Rate (%)
50
3-terminal capacitor
Capacitance: 0.022µF
with no varistor
function
0
0 500 1000 1500 2000
Pulse Voltage Applied (V)
V
800ns
Residual ratio
when 1000 pulses
are applied
!Temperature Characteristics of
Varistor Voltage - Insulation Resistance (VFS9V)
Insulation Resistance (MΩ)
10 4
10 2
10
1
Insulation
resistance
Change rate of
varistor voltage
+10
0
−10
Change Rate of Varistor Voltage (%)
10 3 −30 0 30 60 90
Temperature (D)
Continued on the following page.
164