Powering Freight & Transportation - Power Systems Design

NEW PRODUCTS NEW PRODUCTS
MOSFETs for Efficiency, Reliability, and Safety in
Lighting and SMPS
STMicroelectronics has increased the
ruggedness, switching performance and
efficiency of power MOSFETs for lighting
ballasts, where they are used in the PFC
and Half Bridge sections, as well as in
switching power supplies. The use of
innovative SuperMESH3 TM technology
with lower on-resistance guarantees
that higher efficiency is obtained.
Additionally, due to their superior dv/dt
performance and higher breakdownvoltage
margin, these new devices will
provide enhanced reliability and safety.
The first SuperMESH3 devices
introduced are the 620V STx6N62K3,
which will be followed by the
STx3N62K3, also at 620V, as well as
the 525V STx7N52K3 and STx6N52K3.
The savings in on-resistance enabled
by SuperMESH3 reduce R DS(on) in
DPAK packages to 1.28 Ohms in the
STD6N62K3 at 620V and 0.98 Ohms
in the STD7N52K3 at 525V boosting
operating efficiency in applications
such as low-energy lamp ballasts. The
new technology also reduces reverserecovery
time (Trr), gate charge, and
intrinsic capacitance, leading to
improved switching performance and
enabling higher operating frequencies.
As a further advantage of
ST’s SuperMESH3 technology, which
combines strip topology with an
optimized vertical structure, the new
devices also exhibit one of the best-inclass
dv/dt behaviors. This translates
into increased reliability and safety in
lighting and other consumer electrical
applications. All SuperMESH3 devices
are 100% avalanche tested, and also
incorporate zener protection to deliver
all-round robust performance.
By achieving the lowest on-resistance
per area among comparable highvoltage,
fast-recovery technologies,
SuperMESH3 allows the STx6N62K3,
STx7N52K3, STx3N62K3 and
STx6N52K3 to use smaller packages
such as DPAK, than similarly rated
alternatives. This saves footprint and
board size, yet matches the switching
and thermal performance of physically
larger devices.
The STx6N62K3 is available in
IPAK, DPAK, TO-220, and TO-220FP
packages, priced from $0.62 for 1000
pieces.
The STx3N62K3 at 2.5 Ohms will
be available in IPAK, DPAK, D2PAK,
TO-220 and TO-220FP packages.
The STx7N52K3 at 0.98 Ohms will
be introduced in DPAK, D2PAK,
TO-220, and TO-220FP packages
and the STx6N52K3 at 1.2 Ohms will
be available in DPAK and TO-220FP
packages. These lines will enrich the
620 and 520V portfolio of SuperMESH3
products, which will be in volume
production by Q4 2008.
electronica: Hall A5 Stand 207
Hall A5 Stand 159
www.st.com
Super Junction Power MOSFETs Improve Efficiency and
Switching Speed in Applications to 600V
White Power SMD LEDs utilizing InGaN/TAG on Sapphire
Technology
Vishay Intertechnology has released
the industry’s first high-intensity white
power SMD LEDs in the CLCC-6 and
CLCC-6 flat ceramic packages to offer
InGaN/TAG on sapphire technology for
high optical power from 2240mcd to
5600mcd.
Designed to reduce costs in highvolume
applications, the new VLMW63..
series features the CLCC-6 package and
a low thermal resistance to 50k/W, while
the VLMW64 series in the CLCC-6 flat
package offers a low thermal resistance
of 40k/W and an ultra-low profile of
0.9mm.
With compact footprints of 3.3mm
by 3.4mm, the ceramic packages of
the LEDs allow the additional current
drive for a maximum light output while
maintaining a high service life of up to
50,000 hours, making them ideal light
sources in space-limited applications
where thermal management is a key
consideration.
The devices are optimized for
backlighting and illumination in
automotive and transport, consumer,
and general applications. Typical end
products include flashes for cameras;
emergency lighting; and automotive
instrument panels and exterior lighting,
such as brake lights and turn signals.
The LEDs offer a typical luminous flux
of 11000 mlm and optical efficiency
up to 30 lm/W. The devices feature a
luminous intensity ratio per package unit
of IV max/IV min ≤1.6, forward voltage
up to 4.3V and 60° half-intensity angle.
The VLMW63 and VLMW64 LEDs
are compatible with IR-reflow solder
processes, in accordance with CECC
00802 and J-STD-020C. Preconditioned
according to JEDEC Level 4 standards,
the CLCC-6 and CLCC-6 flat packages
are lead (Pb)-free and RoHS-compliant.
The devices are automotive qualified
AEC-Q101 and offer an ESD-withstand
voltage up to 2kV in accordance with
JESD22-A114-B.
Samples and production quantities of
the new VLMW63 and VLMW64 highintensity
white power SMD LEDs are
available now.
electronica: Hall A5 Stand 143
www.vishay.com
Featuring 20A (TK20A60U), 15A
(TK15A60U) and 12A (TK12A60U)
current ratings, the three new DTMOS
II power MOSFETs are ideal for switch
The new DTMOS II family brings
together the latest version of
Toshiba’s Super Junction MOSFET
technology with the company’s optimised experience the drive
mode power supplies, lighting ballasts, cell design. The result is a range of
motor drives and other applications
requiring high efficiency, high-speed
devices that combine minimised
on resistance and gate charge – a
automotive.telematics.sensors.infotainment.security.
switching. Respective RDS(on) and Qg key factor in switching speed – with
ratings of 0.19Ω and 27nC, 0.3Ω and high levels of ruggedness. All of the
17nC, and 0.4Ω and 14nC mean that the new MOSFETs, for example, provide
devices have the industry’s lowest ‘Qg * industry-leading avalanche durability
Toshiba Electronics Europe has RDS(on)’ at comparable Current class. and reverse recovery characteristics.
announced the first products from its All of the new devices are supplied in
electronica: Hall A5 Stand 476
new DTMOS II family of rugged, highefficiency,
high-speed power MOSFETs.
the compact TO220SIS ‘smart isolation’
package that offers full pin compatibility
www.toshiba-components.com
The new 600V power MOSFETs
with existing TO-220 devices, while
combine a very low on resistance (RDS(on)) delivering a 13.5% reduction in PCB
and reduced gate charge (Qg) to deliver
an RDS(on) x Qg ‘figure of merit’ that is
15% lower than the company’s existing
DTMOS I range and 68% lower than
conventional MOSFETs.
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mounting height. This package uses
copper connections rather than
aluminium bonding wires, which leads to
improved current and lower resistance
ratings and aids heat dissipation.
Power Systems Design October 2008
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