Silicon PIN Photodiode VBP104S, VBP104SR

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VBP104S, VBP104SR Vishay Semiconductors BASIC CHARACTERISTICS Note Tamb = 25 °C, unless otherwise specified BASIC CHARACTERISTICS Tamb = 25 °C, unless otherwise specified Silicon PIN Photodiode PARAMETER TEST CONDITION SYMBOL MIN. TYP. MAX. UNIT Forward voltage IF = 50 mA VF 1 1.3 V Breakdown voltage IR = 100 µA, E = 0 V(BR) 60 V Reverse dark current VR = 10 V, E = 0 Iro 2 30 nA Diode capacitance VR = 0 V, f = 1 MHz, E = 0 VR = 3 V, f = 1 MHz, E = 0 CD CD 48 17 40 pF pF Open circuit voltage Ee = 1 mW/cm2 , λ = 950 nm Vo 350 mV Temperature coefficient of Vo Ee = 1 mW/cm2 , λ = 950 nm TKVo - 2.6 mV/K Short circuit current Ee = 1 mW/cm2 , λ = 950 nm Ik 32 µA Temperature coefficient of Ik Ee = 1 mW/cm2 , λ = 950 nm TKIk 0.1 %/K Reverse light current Ee = 1 mW/cm2 , λ = 950 nm, VR = 5 V Ira 25 35 µA Angle of half sensitivity ϕ ± 65 deg Wavelength of peak sensitivity λp 940 nm Range of spectral bandwidth λ0.1 430 to 1100 nm Noise equivalent power VR = 10 V, λ = 950 nm NEP 4 x 10-14 W/√Hz Rise time Fall time I ro - Reverse Dark Current (nA) 1000 100 10 V R = 10 V VR = 10 V, RL = 1 kΩ, λ = 820 nm VR = 10 V, RL = 1 kΩ, λ = 820 nm tr 100 ns tf 100 ns 1 0.6 20 40 60 80 100 0 20 40 60 80 100 94 8403 Tamb - Ambient Temperature (°C) 94 8409 T amb - Ambient Temperature (°C) Fig. 1 - Reverse Dark Current vs. Ambient Temperature Fig. 2 - Relative Reverse Light Current vs. Ambient Temperature www.vishay.com For technical questions, contact: detectortechsupport@vishay.com Document Number: 81170 2 Rev. 1.0, 13-Aug-09 I - Relative Reverse Light Current ra rel 1.4 1.2 1.0 0.8 VR =5V λ = 950 nm
I ra - Reverse Light Current (µA) 0.1 0.01 0.1 1 94 8421 Ee - Irradiance (mW/cm ) 2 I ra - Reverse Light Current (µA) C D - Diode Capacitance (pF) 1000 100 10 1 100 Fig. 3 - Reverse Light Current vs. Irradiance 10 94 8422 1 0.1 1 10 VR =5V λ= 950 nm Fig. 4 - Reverse Light Current vs. Reverse Voltage 80 60 40 20 94 8423 λ = 950 nm 1 mW/cm 2 0.5 mW/cm 2 0.2 mW/cm 2 0.1 mW/cm 2 0.05 mW/cm 2 V R - Reverse Voltage (V) E = 0 f = 1 MHz 0 0.1 1 10 V R - Reverse Voltage (V) Fig. 5 - Diode Capacitance vs. Reverse Voltage 10 100 100 VBP104S, VBP104SR Silicon PIN Photodiode Vishay Semiconductors 0 350 550 750 950 Fig. 6 - Relative Spectral Sensitivity vs. Wavelength Fig. 7 - Relative Radiant Sensitivity vs. Angular Displacement Document Number: 81170 For technical questions, contact: detectortechsupport@vishay.com www.vishay.com Rev. 1.0, 13-Aug-09 3 S(λ) rel - Relative Spectral Sensitivity S rel - Relative Radiant Sensitivity 1.0 0.8 0.6 0.4 0.2 94 8420 λ - Wavelength (nm) 1.0 0.9 0.8 0.7 94 8406 0.6 0° 0.4 0.2 0 10° 20° 1150 30° 40° 50° 60° 70° 80° ϕ - Angular Displacement
Page 1: DESCRIPTION VBP104S and VBP104SR ar
Page 5 and 6: TAPING DIMENSIONS FOR VBP104S in mi
Page 7: Disclaimer All product specificatio

Silicon PIN Photodiode VBP104S, VBP104SR

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