E-mobility Technology Winter 2020

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Intelligent Power POWER ELECTRONICS Modules accelerate transition to SiC-based Electric Motion New fast switching Silicon Carbide (SiC) Power Transistors are now widely available as discrete devices or bare die. Their low on-resistance at high blocking voltages, high switching speed and thermal performance allows system engineers to achieve significant gains in size, weight and efficiency for motor drives and battery chargers whilst anticipating a continuous drop in SiC devices pricing. However, an important brake for the adoption of SiC in high power applications is the availability of welloptimized power modules as well as the learning curve in reliably driving them. Intelligent Power Modules answer both challenges by offering highly integrated and plugin-play solutions accelerating time-to-market and saving engineering resources. Pierre Delatte, CTO, CISSOID This article discusses the benefits of selecting CISSOID’s 3-Phase 1200V SiC MOSFET Intelligent Power Module (IPM) scalable platform for power converter designs in E-mobility applications. This low-loss technology offers a fully integrated solution including a 3-Phase water-cooled SiC MOSFET power module with built-in gate drivers. This article not only presents the electrical and thermal characteristics of the power modules but also discusses the support they bring to fully benefit from SiC advantages. There, a key element is the gate driver and its ability to drive safely and reliably the SiC MOSFETs. 128 e-mobility Technology International | www.e-motec.net
e-mobility Technology International | Vol 7 | Winter 2020 Figure 1. CXT-PLA3SA12450 3-Phase 1200V/450A SiC MOSFET Intelligent Power Module Low losses & enhanced thermal robustness translate into higher power density CXT-PLA3SA12450 is part of a scalable platform ranging from 300A to 600A per phase. This 3-Phase 1200V/450A SiC MOSFET IPM features low conduction losses, with 3.25mOhms on-resistance, and low switching losses, with 7.8mJ turn-on and 8mJ turn-off energies at 600V/300A (see Table). It cuts losses by at least a factor of three with respect to state-of-the-art IGBT power modules. The module is water-cooled through a lightweight AlSiC pin-fin baseplate for a junction-tofluid thermal resistance of 0.15°C/W. The power module is rated for junction temperatures up to 175°C while its gate driver operates up to 125°C ambient. The IPM withstands isolation voltages up to 3600V (50Hz, 1min). e-mobility Technology International | www.e-motec.net 129
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VOL 7 | WINTER 2020 FUTURE MOBILITY
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CONTENTS 4 ELECTRIFICATION PLANNING
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ELECTRIFICATION PLANNING The smart,
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Smart depots: Why software integrat
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ne of the big challenges in making
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LiDAR Integration in Autonomous Ele
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Sensing Singular Resolution and Obj
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Driving change: How materials scien
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Further critical factors to EV safe
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POWER ELECTRONICS Semiconductor cho
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INFOTAINMENT AND CONNECTIVITY Infor
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and software, smooth (firmware) upd
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MATERIALS RESEARCH Moving e-mobilit
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Surface solutions for a wide range
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INFOTAINMENT AND CONNECTIVITY Auton
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THE FIRST VIRTUAL TRADE FAIR IN THE
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Advancing EV Electronics with Light
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Adhesives Light-curable adhesives c
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Copper and aluminium wire splicing
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BATTERY TECHNOLOGY An application f
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Open Loop Fluxgate current sensor o
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MATERIALS RESEARCH As automakers st
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Another thing which must not be for
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e-mobility Technology International
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Smart Home and Smart Power Grid Com
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Accelerating ADAS and AD with End t
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Page 126 and 127: POWERTRAINS P2 hybrid modules enabl
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Page 150: MANY ORGANIZATIONS HAVE A VISION. w
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E-mobility Technology Winter 2020

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