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Nitrile Oxides, Nitrones, and Nitronates in Organic Synthesis : Novel ...

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NO2CH2CH2CH2CO2ME<br />

Me CO2Me<br />

NO2CH CH<br />

61b<br />

61a<br />

CHCO2Me<br />

Me<br />

Me 3SiCl/Et 3N<br />

SYNTHESIS OF NITRONATES 483<br />

MeO 2CCH 2CH 2CH N<br />

51m<br />

O<br />

OSiMe 3<br />

BSTFA/Et3N, C6H6, 80°C, 2h – 91% Ref.186<br />

Ref. 216<br />

Me3SiCl/Et3N, CCl4, 20°C – 89%<br />

BSA, 100°C, 2h or 80°C, 30h<br />

Scheme 3.61<br />

Me3SiO N<br />

O<br />

51n<br />

Me<br />

CHCHMeCO 2Me<br />

CO2Me<br />

98% two diastereomeres ~ 1:1<br />

Ref. 216<br />

AN (61a), which is easily generated from nitromethane <strong>and</strong> methyl acrylate<br />

by the Michael reaction, is smoothly silylated by both Me3SiCl/Et3N (211)<br />

<strong>and</strong> amide BSTFA (182) to give the correspond<strong>in</strong>g SENA (51 m) <strong>in</strong> high yield.<br />

However, its sterically h<strong>in</strong>dered analog, viz., product (61b), does not react with<br />

Me3SiCl/Et3N <strong>and</strong> gives the correspond<strong>in</strong>g SENA (51n) <strong>in</strong> the reaction with<br />

BSA only under very drastic conditions. The removal of the Me substituent from<br />

the α or γ position of (61b) leads to a sharp <strong>in</strong>crease <strong>in</strong> the silylation rate <strong>and</strong> a<br />

change <strong>in</strong> the character of the process.<br />

3.2.3.6. <strong>Synthesis</strong> of Silyl <strong>Nitronates</strong> by the Replacement of an Heteroorganic<br />

Fragment <strong>in</strong> Organoboron <strong>Nitronates</strong> An alternative procedure for the synthesis<br />

of SENAs is based on the replacement of a elementorganic fragment <strong>in</strong><br />

elementorganic derivatives of nitronic acids with specially selected silylat<strong>in</strong>g<br />

agents. Evidently, these reactions are reversible <strong>and</strong> can proceed only if the formation<br />

of new bonds is energetically favorable. This approach was studied only<br />

as applied to boron derivatives of alkanenitronic acids (217) (Scheme 3.62).<br />

For example, the reactions of silylam<strong>in</strong>es with dimeric dialkylboron nitronates<br />

(62a–c) rapidly afford the correspond<strong>in</strong>g SENA (51o–r) <strong>in</strong> satisfactory yields,<br />

<strong>and</strong> these products can be isolated <strong>and</strong> puriÞed by distillation. Evidently, the ga<strong>in</strong><br />

<strong>in</strong> energy due to the replacement of the weak Si–N bond by the stronger Si–O<br />

bond is the driv<strong>in</strong>g force of the process. Besides, there is apparently an additional<br />

ga<strong>in</strong> <strong>in</strong> energy <strong>in</strong> the case of trimeric borylated am<strong>in</strong>es compared to dimeric<br />

nitronates (62) because of the stronger coord<strong>in</strong>ation bond, although the energy<br />

of the > B–O s<strong>in</strong>gle bond (544 kJ/ mol) is substantially higher than that of the<br />

B–N s<strong>in</strong>gle bond (443 kJ/ mol) (218). Interest<strong>in</strong>gly, as opposed to the reaction<br />

of silylam<strong>in</strong>e presented <strong>in</strong> Scheme 3.62, the reaction with the correspond<strong>in</strong>g<br />

silyl halide does not occur. On the contrary, the backward reaction with the

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