Combined use of in-situ curvature and full- wafer ... - Laytec
Combined use of in-situ curvature and full- wafer ... - Laytec
Combined use of in-situ curvature and full- wafer ... - Laytec
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Monitor<strong>in</strong>g the temperature pr<strong>of</strong>ile across the whole <strong>wafer</strong><br />
Temperature ( o C)<br />
Aixtron Argus temperature pr<strong>of</strong>iler<br />
1200<br />
1000<br />
800<br />
600<br />
400<br />
Wafer centre<br />
Wafer edge<br />
200<br />
0 2000 4000 6000 8000<br />
Time (s)<br />
(d)<br />
Susceptor<br />
Si slips due to the temperature nonuniformity<br />
across the <strong>wafer</strong>, result<strong>in</strong>g <strong>in</strong><br />
very bowed <strong>wafer</strong>.<br />
Susceptor C B A B C<br />
Wafer<br />
1062<br />
1052<br />
1042<br />
1032<br />
1022<br />
1012<br />
1002<br />
992<br />
982<br />
972<br />
962<br />
Temperature ( o C)<br />
After Si slip<br />
1060<br />
1040<br />
1020<br />
1000<br />
980<br />
960<br />
940<br />
Centre<br />
Edge<br />
11
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