Combined use of in-situ curvature and full- wafer ... - Laytec
Combined use of in-situ curvature and full- wafer ... - Laytec
Combined use of in-situ curvature and full- wafer ... - Laytec
You also want an ePaper? Increase the reach of your titles
YUMPU automatically turns print PDFs into web optimized ePapers that Google loves.
Electrolum<strong>in</strong>escence from 6-<strong>in</strong>ch LED <strong>wafer</strong><br />
D. Zhu et al., “GaN-based LEDs grown on 6-<strong>in</strong>ch diameter Si (111)<br />
substrates by MOVPE”, Proc. SPIE 7231, 723118 (2009)<br />
Processed at Q<strong>in</strong>etiQ<br />
Current (mA)<br />
Photo diode current (a.u.)<br />
30<br />
25<br />
20<br />
15<br />
10<br />
5<br />
0<br />
1.4<br />
1.2<br />
1.0<br />
0.8<br />
0.6<br />
0.4<br />
0.2<br />
0.0<br />
EL <strong>in</strong>tensity (a.u.)<br />
2500<br />
2000<br />
1500<br />
1000<br />
500<br />
0<br />
350 400 450 500 550 600 650<br />
Wavelength (nm)<br />
0 1 2 3 4<br />
Voltage (V)<br />
Photo diode current (a.u.)<br />
0.3<br />
0.2<br />
0.1<br />
0.0<br />
0 10 20 30 40 50 60 70<br />
Drive current (mA)<br />
0 100 200 300 400 500<br />
Drive current (mA)<br />
14
Change language