Combined use of in-situ curvature and full- wafer ... - Laytec

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In-situ curvature measurement - EpiCurve EpiCurve measurement principle (after LayTec Epicurve manual) Etalon Beam splitter Laser Susceptor Detector Wafer 4
Curvature evolution during growth of an LED structure on Si Process temperature (Tc) Curvature/km -1 1200 1000 800 600 400 200 50 0 -50 -100 -150 0 0.00 0 5000 10000 15000 20000 0 5000 10000 15000 20000 Time (s) Concave Convex 0.40 0.35 0.30 0.25 0.20 0.15 0.10 0.05 Reflectance (a.u.) LayTec Epicurve ® TT After cooling: Mg-doped GaN Si-doped GaN AlGaN AlN Si substrate 5
Page 1 and 2: Combined use of in-situ curvature a
Page 3: LED structure on Si substrate Schem
Page 7 and 8: Graphic-EYE whole wafer optical ima
Page 9 and 10: Wafer curvature change Temperature
Page 11 and 12: Monitoring the temperature profile
Page 13 and 14: GaN-based LED looks good on 6-inch
Page 15 and 16: Summary � Flat and crack-free GaN

Combined use of in-situ curvature and full- wafer ... - Laytec

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