Combined use of in-situ curvature and full- wafer ... - Laytec
Combined use of in-situ curvature and full- wafer ... - Laytec
Combined use of in-situ curvature and full- wafer ... - Laytec
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Curvature evolution dur<strong>in</strong>g growth <strong>of</strong> an LED structure on Si<br />
Process temperature (Tc)<br />
Curvature/km -1<br />
1200<br />
1000<br />
800<br />
600<br />
400<br />
200<br />
50<br />
0<br />
-50<br />
-100<br />
-150<br />
0<br />
0.00<br />
0 5000 10000 15000 20000<br />
0 5000 10000 15000 20000<br />
Time (s)<br />
Concave<br />
Convex<br />
0.40<br />
0.35<br />
0.30<br />
0.25<br />
0.20<br />
0.15<br />
0.10<br />
0.05<br />
Reflectance (a.u.)<br />
LayTec Epicurve ® TT<br />
After cool<strong>in</strong>g:<br />
Mg-doped GaN<br />
Si-doped GaN<br />
AlGaN<br />
AlN<br />
Si substrate<br />
5
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