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Ultraviolet Photodiodes 

Silicon Carbide (SiC) 

+ 

Gallium Nitride (GaN) 

Aluminum Gallium Nitride (AlGaN) 

 

 

Robust Photodiodes (Chips) 

in TO-style hermetic packages 

UV LAMP MONITORS 

Boston Electronics Corporation 

91 Boylston Street, Brookline MA 02445 USA 

(800)347-5445 or (617)566-3821 fax (617)731-0935 

www.boselec.com uv@boselec.com

Characterization of SiC photodiodes 

for high irradiance UV radiometers 

S. Nowy 

1 1 1 1 1 1 2 2 

, B. Barton , S. Pape , P. Sperfeld , D. Friedrich , S. Winter , G. Hopfenmüller , T. Weiss 

Abstract 

For monitoring high UV irradiance, silicon carbide 

(SiC) based photodiodes are used. In this paper we 

describe the characterization of novel SiC UV 

photodiodes in terms of their spectral and integral 

responsivity. Special attention is paid to the aging 

behavior of the photodiodes due to high UV irradiance. 

Artificial aging of the samples is performed by 

illumination with a high power medium pressure 

mercury discharge lamp. 

Preliminary studies 

• comparison of different photodiodes: 

SiC from Cree and sglux 

AlGaN from Genicom 

• long term irradiation with a low pressure UVC 

2 

lamp (Philips PL L 36W 4P, approx. 4.2mW/cm at 

peak wavelength) 

normalized photocurrent 

120 

115 

110 

105 

100 

095 

090 

SiC photodiodes used in this study 

• 8 novel SiC photodiodes 

• manufacturer sglux SolGel Technologies GmbH 

• improved visible blindness compared to SiC 

photodiodes from Cree 

2 

• area of the SiC chip: 1mm 

Measurement setups 

1. Artifical aging of the photodiodes 

• irradiation with a high power medium pressure Hg 

discharge lamp 

uv technik meyer UVH2022 17, spectrum see fig. 2 

• operated at about 1.8kW constant electric power 

2 

• irradiance level in the beginning approx. 17mW/cm 

• SiC reference detector for irradiance monitoring 

• diodes 01, 03 06, 08 are irradiated 

• diodes 02 and 07 are not exposed to UV radiation, 

and used as reference 

2. Characterization of the photodidoes 

• irradiation with a low pressure Hg discharge lamp 

Wedeco NLR 1825, spectrum see fig. 2 

2 

• UV irradiance approx. 1.04mW/cm 

• SiC reference detector for irradiance monitoring 

• diodes 01 08 are characterized 

Physikalisch-Technische Bundesanstalt Braunschweig und Berlin 

1 

2 

AlGaN Genicom 

SiC sglux 

SiC Cree 

0 2000 4000 6000 

aging time [h] 

8000 10000 

Figure 1: Normalized photocurrent for different types 

of UV photodiodes during long term irradiation with a 

low pressure UVC lamp. 

• SiC photodiodes loose responsivity in the 

beginning of the irradiation (Cree: 9%, sglux: 4%) , 

then no further degradation 

• AlGaN photodiodes show an increased 

responsitivity (up to 20%) and a broad scatter 

3. Spectral responsivity of the photodiodes 

• obtained at PTB’s differential spectral responsivity 

(DSR) facility 

• usually 

used for calibration of solar cells, modified 

for measurements in the UV range 

• diodes 01 04 are investigated 

Spectral emission from the UV lamps 

normalized intensity 

4.1 Photometry and Applied Radiometry • e-mail: stefan.nowy@ptb.de 

sglux SolGel Technologies GmbH, Berlin, Germany 

10 1 

10 0 

10 1 

10 2 

10 3 

10 4 

10 5 

low pressure 

medium pressure 

250 300 350 400 450 500 550 600 

wavelength [nm] 

Figure 2: Spectral emission from the low (red line) and 

medium (green line) pressure lamps. Normalized to 

253.75nm. 

Photodiode behavior during artificial aging 


Figure 3: Normalized photocurrent for 5 photodiodes 

during aging with the medium pressure lamp. 

• total aging time approx. 93h 

• aging interrupted for characterization with the low 

pressure Hg lamp (dashed lines) 

• decrease in responsivity up to 2.2% 

Photodiode characterization 


102 

100 

098 

096 

094 

Diode 01 

Diode 08 

Diode 06 

092 

Diode 04 

Diode 05 

0 10 20 30 40 50 60 70 80 90 


102 

100 

098 

096 

094 

Diode 02, unaged 


Diode 06 

Diode 03 

Diode 08 

Diode 05 

092 

Diode 01 

Diode 04 

0 10 20 30 40 50 60 70 80 90 


Figure 4: Normalized photocurrent, characterization 

with the low pressure lamp. 

Unaged photodiodes 02 and 07: 

• no decrease in photocurrent 

Aged photodiodes 01, 03 06, and 08: 

• decrease in responsivity up to 4.7% 

• much larger decrease in responsivity as compared 

to fig. 3 

• aging of the photodiodes mainly in the beginning 

Spectral responsivity 

spectral responsivity [μA/(W/m²)] 

010 

008 

006 

004 

002 

000 

pristine 

aged 

240 260 280 300 320 340 360 380 


Figure 5: Spectral responsivity of diode 04 in pristine 

state (solid line) and after 93h of aging (dashed line). 

change in spectral responsiv ty 

20% 

15% 

10% 

5% 

0% 

5% 

10% 

Diode 01 


Diode 03 

Diode 04 

240 260 280 300 320 340 360 380 


Figure 6: Change in spectral responsivity after aging 

of diodes 01 04.Additionally, the spectral responsivity 

of diode 04 in pristine state is shown as thin line. 

Unaged photodiode 02: 

• no change in spectral responsivity 

Aged photodiodes 01, 03, and 04: 

• change in spectral responsivity is observed 

• change is wavelength dependent 

• below approx. 310nm: loss in responsivity 

• above approx. 310nm: gain in responsivity 

Change in integral responsivity 

Due to wavelength dependent responsivity: 

• integral responsivity depends on the lamp used 

• calculation uses spectral responsivity (fig. 6) and 

spectra of the low and medium pressure lamps 

(fig. 2) 

low pressure medium pressure 

Diode 01 4,7% 1.4% 

Diode 02 0.7% 0.5% 

Diode 03 3.5% 1.2% 

Diode 04 5.0% 2.3% 

Calculated values perfectly agree with measurement 

data from both types of lamps (fig. 3 and fig. 4). 

Conclusions 

Very recent measurements after additional 120h of 

irradiation: photodiodes are not aging significantly 

any further 

 

after burn in: SiC photodiodes are very stable 

Outlook 

• degradation studies of the photodiodes will be 

continued 

• additional photodiodes will be investigated

SiC UV Photodiode Selection Guide 

Basic Information 


That guide assists you selecting the right UV Silicon Carbide (SiC) based 

photodiode for your application. Basically this selection is between active 

area, spectral behaviour, packaging and additional special features. This 

first page is basic information and subsequent pages provide background 

knowledge and electronic circuit examples. 

About the sglux Silicon Carbide (SiC) UV photodiodes 

The offered UV photodiodes base on a Silicon Carbide detector chip. SiC provides the unique 

property of near-perfect visible blindness, low dark current, high speed and low noise. These 

features make SiC the best available material for visible blind semiconductor UV detectors. 

The SiC detectors can be continuously operated at up to 170°C (338°F). The temperature 

coefficient of signal is


Background Information 

Table of Contents 

1.0 Selection of the Chip active area (photocurrent limits) page 2 

1.1 Problems with current too low (circuit linearity & temperature issues) page 3 

1.2 Problems with current too high (saturation) page 5 

1.3 Calculation of the relation between UV radiation and photocurrent page 5 

2.0 Selection of the Spectral Response page 7 

2.1 Unfiltered SiC page 7 

2.2 Filtered SiC page 8 

3.0 Packaging features page 9 

3.1 Overview page 9 

3.2 Drawings page 10 

4.0 Special features page 12 

Appendix A Photodiode Amplification Notes page 13 

Appendix B Application Note for Photodiodes page 13 

1.0 Selection of the Chip active area (photocurrent limits) 

The chip active area determines how many light quantum, (photons), can be collected by a 

photodetector. Semiconductor detectors, such as SiC UV photodiodes, convert the photons 

into an electrical current, the photocurrent I. This photocurrent rises linearly with the chip 

active area. sglux currently offers five different area sizes 

A1 = 0.06 mm 2 (S-type) 

A2 = 0.20 mm 2 (M-type) 

A3 = 0.50 mm 2 (D-type) 

A4 = 1.00 mm 2 (L-type) 

A5 = 4.00 mm 2 (XL-type) 

As the detector price rises with increasing active area, (see price information at p.1), the area 

selection basically is a compromise between costs and current. 

If you know the minimum and maximum irradiance you like to measure with the UV 

photodiode the following simplified formula (1) shows a rough estimation of the photocurrent I 

given a particular chip active area AChip. 

Rev. 5.0 specifications subject to change without notice Page 2 [13] 

Manufacturer: sglux GmbH; Agent: Boston Electronics, 91 Boylston St, Brookline MA 02445 USA 

(800)347-5445 or (617)566-3821; fax (617)731-0935; uv@boselec.com ; www.boselec.com


I = Achip E 1.000 (1) 

I is the photocurrent in nA, Achip is the chip active area in mm 2 (enter values of 0.06 or 0.20 or 

1 or 4) and E is the spectral irradiance of the UV light source you like to measure in mWcm - 

2 nm -1 . You may find more information about photocurrent calculation in chapter 1.3 

(Calculation of the relation between UV radiation and photocurrent), p. 5. 

If you do not know the irradiance coming from your UV light source chapter 1. section 1.3 

gives some examples of common UV sources. 

The minimum current (photodiode output at lowest irradiance to be measured) should not fall 

below 500pA. The maximum current should not exceed 2μA and must not exceed 40μA if the 

component’s diode properties are to be maintained. Please refer to a detailed discussion on 

suitable minimum and maximum currents in the following chapters 1. section 1.1 (Problems 

with current too low) and 1. section 1.2 (Problems with current too high). These chapters 

assume a certain basic knowledge in photodiode amplifier circuits. If you are not familiar with 

circuits please see Appendix A (Photodiode Amplification Notes) at page 10. 

1.1 Problems with current too low 

If the current is too low, one ore more of the following problems (P1 – P4) may affect the 

measurement: 

P1 The measurement signal comes too close to the UV photodiode dark current 

P2 High resistance feedback resistors (Rf) must be used which causes 

temperature drift and non linearity problems 

P3 Speed problems 

P4 Risk of electromagnetic interferences 

Using SiC, P1 can be neglected due to the extremely low dark current of the sglux 4H SiC UV 

photodiodes of only some fA. P2 (temperature drift and non linearity) becomes essential 

from values Rf > 10 GTherefore, the photocurrent I should be strong enough to allow Rf 

values of 10 GThe relation between I and Rf is given by Ohm’s law: 

I = Usupply / Rf (2) 

where Usupply is the supply voltage of the used transimpedance amplifier. A typical value is 

5.00 V. Formula (2) calculates: 

Imin = 5.00V/10 G = 500pA (3) 





If a higher speed measurement is needed P3 (speed problems) could become an issue. As 

the SiC UV photodiode’s detection speed is extremely high (in nanoseconds only) the 

amplifier speed (rise time) always determines the circuit’s speed. The amplifier rise time is 

calculated with the following formula: 

= Rf Cf (4) 

where Cf is the feedback capacitor value which should not be lower than 0.1 nF. A lower Cf 

risks hitting the circuit’s resonance. Using a Cf = 0.1 nF and a Rf = 10 Gthe rise time is 

calculated as follows: 

= 10 G 0.1 nF = 1 second (5) 

Formula (5) shows that using a Rf = 10 Gthe circuit becomes very slow. If a higher speed is 

needed the photocurrent I must be increased to allow a decrease in the Rf value. This can be 

done by increasing the UV radiation or, if that is not feasible, by increasing the chip active 

area. 

The last problem (P4) that can be caused with too low photocurrent (= due to too small an 

active area) is complications from electromagnetic interferences. This is a general issue. 

Decreasing photocurrents call for increasing shielding efforts which then increases the system 

price of the product. If the radiation (and thus the current) is low one should consider using a 

sglux TOCON pre-amplified hybrid UV sensor. 

Conclusion of needed minimum photocurrent Imin 

To achieve a stable temperature and linear photodiode-amplifier system the lowest 

measurement current Imin should be higher than 500pA. If a high speed measuring circuit is 

needed Imin is calculated by the following formula: 

Imin = Usupply Cf (6) 

With Usupply = 5.00V (typical value), Cf = 0.1nF (recommended value) and Rf = 10 G(lowest 

recommended value) the formula reduces to: 

Imin = 500 (7) 

where Imin results in nanoamperes (nA) and must be in milliseconds. 

In general, given these reasons, a decreasing photocurrent needs a more advanced amplifier 

design and better shielding. If you are not familiar with low current circuit development you 

should consider selecting a higher current (and thus larger active area) photodiode even if the 

price of a photodiode is higher. This strategy will provide conservative results and the initial 

increased financial cost will save you money in the long run. 





1.2 Problems with current too high (saturation) 

In the previous pages we discussed the calculation of a minimum recommended photodiode 

current. It also should be mentioned that aside from the photocurrent being too low too high of 

a current may cause problems as well due to saturation effects. The saturation current Isat of a 

photodiode is the current limit from which the output of a photodiode turns to arbitrary values. 

It is determined by the photodiode’s open circuit voltage VOC and its serial resistance RS 

following the formula below: 

Isat = VOC / RS (8) 

A typical value (SiC photodiode) for VOC is 2.0V and for RS = 50k. The calculation is a 

follows: 

Isat = 2.0 V / (50 10 3 ) = 4 10 -5 A = 40μA. 

The needed minimum current (500 pA) is higher than the saturation current is higher by six 

orders of magnitude. Reaching the saturation limit of a SiC photodiode is therefore very 

unlikely. 

However, one should consider that a SiC UV photodiode is a sensible instrument for 

measurement. Even if SiC UV photodiodes are the most stable and most linear UV 

photodiodes currently available, values that come close to the limit should be avoided. The 

majority of applications use a photocurrent range from 1nA to 2000nA. Thus, whenever 

possible, the maximum current should not exceed 2000nA. 

1.3 Calculation of the relation between UV radiation and photocurrent 

The photocurrent I is calculated by the following formula: 

I = 

where I is the photocurrent in A, Achip is the chip active area in m 2. Schip is the chip’s spectral 

sensitivity in AW -1 and E is the spectral irradiance of the UV light source in Wm -2 nm -1 . Due to 

extreme visible and IR blindness the integral value from 400nm to can be neglected even if 

Esource() is very strong. To get a rough estimate of the photocurrent generated by a certain 

irradiance a simplification of (9) leads to (10). That simplification assumes that the chip’s 

spectral sensitivity S and the UV source’s irradiance E is a constant value and does not 

depend on wavelength. The calculation is: 

I = Achip Schip E 10.000 (10) 

where I is the photocurrent in nA, Achip is the chip active area in mm 2. Schip is the chip’s 

spectral sensitivity in AW -1 nm -1 and E is the spectral irradiance of the UV light source in 

mWcm -2 nm -1 . 



(800)347-5445 or (617)566-3821; fax (617)731-0935; uv@boselec.com ; www.boselec.com 

(9)


A typical value of Schip is 0.1 A/W. For further refinement please refer to the spectral response 

graph of the UV photodiode you are interested in (see Datasheet) or have a look at chapter 

2.0 (Selection of the Spectral Response, p. 7) of this guide. 

If you know the theoretical spectral irradiance range, (minimal and maximal values), of the UV 

light source and you would like to measure you can easily estimate the photocurrent I by 

using formula (10) and hence select a chip active area (S-, M-, L- or XL-type) that guarantees 

that your minimum radiation generates a photocurrent of more than 500 pA and your 

maximum radiation generates a current of, if possible, less than 2000 nA. 

The following table lists some common UV applications / light sources with their spectral 

irradiances at peak. Please note that some simplifications apply; thus the table gives a rough 

estimation of photocurrents for the different UV source types and different chip active areas. 

UV source Typ. peak E S-Type I M-Type I D-Type / L-Type I XL-Type I 

lacquer hardening 

Fe doped Hg medium 

pressure lamp 

UV sterilisation 

low or medium pressure 

Hg lamp 

Industrial and R&D 

various sources 

UV-Index 

sun 

Burner flame 

detection 

gas or oil flame 

Comments: 

lacquer hardening 

10 W/cm 2 

10 mW/cm 2 

10 μW/cm 2 

- 1 mW/cm 2 

10 μW/cm 2 

10 nW/cm 2 

600 μA 

600 nA with 

attenuated 

„GIGA“ 

feature 

2 mA 5 mA 10 mA 40 mA 

600 nA 2 μA 5 μA 10 μA 40 μA 

0.6 - 40 nA 2 – 200 nA 5 – 500 nA 10 – 1000 nA 40 – 4000 nA 

600 pA 2 nA 5 nA 10 nA 40 nA 

600 fA 2 pA 

100 pA with 

“LENS” feature 

5 pA 10 pA 40 pA 

All current values of the standard photodiodes are too high. For lacquer hardening lamp 

control a special „GIGA“ attenuated photodiode will be applied. Please refer to chapter 4.0. 

(Special features) for more information. 

UV sterilisation 

S-chip is best. M, D, L, XL chips would work but are not needed. 

Industrial and R&D 

All chips are suited. Speed is the main consideration when selecting a chip being mindful of 

linearity and temperature dependence values. Please contact us for further refinement. 

UV-Index 





S-Chips are too small for this application. All other chips can be applied. The reliability 

increases with increasing chip active area. Due to very low current the use of a TOCON (preamplified 

hybrid sensor) should be considered. 

Burner flame detection 

All chips are too small for this type of detection. A burner flame can be detected with the 

photodiode „SG10M-5Lens“. This sensor works with a concentrating lens. Please refer to 

chapter 4.0. (Special features), for more information. Another approach is to use a sglux 

TOCON_ABC1 sensor with its included pre-amplifier. The TOCON_ABC1 converts 

0-54 nW/cm 2 radiation into a 0-15 V output voltage. 

2.0 Selection of the Spectral Response 

This chapter assists in the selection of a spectral response profile best suited for the 

measurement. All sglux 4H SiC UV photodiodes provide an extreme visible/IR blindness of 

more than ten orders of magnitude. That means that the UV photodiodes reliably only 

measure the UV part of a radiation spectrum (and not the visible and/or infrared part), even if 

visible light or infrared radiation is strongly present. This is a unique feature of the 

semiconductor material SiC. Currently no other material provides that extreme visible 

blindness. 

2.1 Unfiltered SiC 

The following graph shows the spectral curve of an unfiltered 4H SiC UV photodiode. 

The curve’s maximum is at approximately 300nm. The response falls down to 10% of 

maximum at 215nm, (UVC edge) and 365nm, (UVA edge). Unfiltered SiC can be used for any 

UV measurements where the whole UV band needs to be measured or a quasi 

monochromatic UV source (such as low pressure lamps) is controlled. 

2.2 Filtered SiC 





Some applications require measurement of one particular part of the UV radiation spectrum, 

and it is essential that other UV radiation parts do not contribute to the photodiode’s current. 

This requirement usually arises from standards as DVGW W294/2006 or CIE087 etc. Other 

applications for filtered photodiodes are UVA-UVB-UVC selective sensor probes. sglux 

industrially produces four different filtered SiC UV photodiode types. 

UVA (max = 335nm) 

UVB (max = 280nm) 

UVC (max = 270nm) 

UV-Index (following CIE087 curve) 

The following graph shows the four different spectra. 

The graph assigns the filtered photodiode’s spectral response to an individual wavelength. 

The following table extracts the most important specifications. 

Filter type Wavelength Sensitivity Wavelength Wavelength Visible 

of max. 

at max. 

10% left side 10% right side Blindness 

no filter (BBand) 300 nm 0.10 A/W 215 nm 365 nm >10 10 

UVA 335 nm 0.06 A/W 310 nm 370 nm >10 10 

UVB 280 nm 0.09 A/W 230 nm 315 nm >10 10 

UVC 270 nm 0.10 A/W 230 nm 285 nm >10 10 

ERYTHEMA 300 nm 0.90 A/W _ 310 nm >10 10 

Other spectral specifications are available on request. 





g 

3.0 Packaging features 

All sglux SiC UV photodiodes use a hermetically sealed melted window metal package. Each 

photodiode is gross and fine leak tested before sales. Two different sizes, (TO18 and TO5), 

with corresponding different heights and pin terminals are offered. 

The reason for the different packaging types are technical in nature, (field of view, electrically 

floating housing, etc.) or just to allow the replacement of a previously applied photodiode by 

keeping the geometric parameters. 

3.1 Overview 

The below table illustrates the different packaging selection opportunities. 

sample 

picture 

selection description 

code 

18 TO18 Ni plated housing, 5.6 mm diameter, 5.2 mm height two gold plated pins 

(Anode grounded and Cathode isolated). 

18ISO90 TO18 Ni plated housing, 5.6 mm diameter, 5.2 mm height three gold plated pins 

(Anode and Cathode isolated, additional third pin for optional grounding of the body). 

18S TO18 Ni plated short housing, 5.6 mm diameter, 3.8 mm height two gold plated pins 

(Anode grounded and Cathode isolated). Not available with filters. 

5 TO5 Ni plated housing, 9.2 mm diameter, 4.3 mm height (unfiltered photodiodes), 6.6 

mm height (filtered photodiodes), two gold plated pins (Anode grounded and 

Cathode isolated). 

5ISO90 TO5 Ni plated housing, 9.2 mm diameter, 4.3 mm height (unfiltered photodiodes), 6.6 

mm height (filtered photodiodes), three gold plated pins (Anode and Cathode 

isolated, additional third pin for optional grounding of the body). 





3.2 Drawings 

Selection code “18” TO18 Ni plated housing, 5.6 mm diameter, 5.2 mm height two gold 

plated pins (Anode grounded and Cathode isolated). 

Selection code “18ISO90” TO18 Ni plated housing, 5.6 mm diameter, 5.2 mm height three 

gold plated pins (Anode and Cathode isolated, additional third pin for optional grounding of the 

body). 

Selection code “18S” TO18 Ni plated short housing, 5.6 mm diameter, 3.8 mm height two 

gold plated pins (Anode grounded and Cathode isolated). Not available with filters. 





Selection Code ”5” (photodiodes without filters) TO5 Ni plated housing, 9.2 mm diameter, 

4.3 mm height, two gold plated pins (Anode grounded and Cathode isolated). 

Selection Code ”5” (photodiodes with filters) TO5 Ni plated housing, 9.2 mm diameter, 6.6 

mm height, two gold plated pins (Anode grounded and Cathode isolated). 





4.0 Special features 

Besides the three main selection criteria chip active area, spectral response and packaging 

details some special features can be added to the photodiode’s properties. These special 

features are useful if the UV radiation is extremely high or low or if the working temperature is 

high. The below table shows the selectable special features. 

selection code description 

Lens Concentrating Lens creating a virtual active area of 55 real active area. This 

approximately multiplies the current by factor 55 while using the same chip active 

area. A disadvantage is a strongly reduced field of view compared with the flat 

window type. 

MEGA special attenuated photodiode for very strong UV radiation up to 500 mW/cm 2 

GIGA special attenuated photodiode for extreme UV radiation up to 7000 mW/cm 2 

Appendix A Photodiode Amplification Notes 

For a correct reading of the photodiode the current (and not the voltage) must be analyzed. 

This requires a short circuiting of the photodiode. Usual approaches are using a 

Picoamperemeter such as Keithley 617 or a transimpedance amplifier circuit as shown below. 

The adjacent design gives an example of a 

simple amplifier circuit. At the left side the 

photodiode is shown. The upper connection 

is the Cathode (isolated pin of the 

photodiode) and the lower connection is the 

Anode (usually grounded pin of the 

photodiode). 

We recommend using a Texas Instruments 

OPA336 transimpedance amplifier. 

The OPA336 is a low priced amplifier that is sufficient for the majority of applications. 

Appendix B Application Note for Photodiodes 




SG01S-18 

Broadband SiC based UV photodiode A = 0,06 mm 2 

General Features 

Properties of the SG01S-18 UV photodiode 

Broadband UVA+UVB+UVC, PTB tested high chip stability 

Active Area A = 0,06 mm 2 

About the material Silicon Carbide (SiC) 

TO18 hermetically sealed metal housing 

10mW/cm 2 peak radiation results a current of approx. 780nA 

SiC provides the unique property of extreme radiation hardness, near-perfect visible 

blindness, low dark current, high speed and low noise. These features make SiC the best 

available material for visible blind semiconductor UV detectors. The SiC detectors can be 

permanently operated at up to 170°C. The temperature coefficient of signal (responsivity) is 

also low, 10 10 - 


Manufacturer: sglux GmbH; Agent: Boston Electronics, 91 Boylston St, Brookline NA 02445 USA 


SG01S-18 


Spectral Response 

Circuit Viewing Angle 

Drawing 




SG01S-18ISO90 



Properties of the SG01S-18ISO90 UV photodiode 

Broadband UVA+UVB+UVC photodiode 



TO18 herm. sealed housing, both pins isolated & in a circle 






also low, 10 10 - 




SG01S-18ISO90 




Drawing 




SG01S-A18 

UVA-only SiC based UV photodiode A = 0,06 mm 2 


Properties of the SG01S-A18 UV photodiode 

UVA-only sensitivity, PTB tested high chip stability 


TO18 hermetically sealed housing 


10mW/cm 2 radiation at 335nm results a current of approx. 360nA 





also low, 10 10 - 




SG01S-A18 

UVA-only SiC based UV photodiode A = 0,06 mm 2 



Drawing 




SG01S-B18 

UVB-only SiC based UV photodiode A = 0,06 mm 2 


Properties of the SG01S-B18 UV photodiode 

UVB-only sensitivity, compliant with CIE078 



TO18 hermetically sealed housing, PTB tested high chip stability 

10mW/cm 2 radiation at peak results a current of approx. 350nA 





also low, 10 10 - 




SG01S-B18 

UVB-only SiC based UV photodiode A = 0,06 mm 2 



Drawing 




SG01S-C18 

UVC-only SiC based UV photodiode A = 0,06 mm 2 


Properties of the SG01S-C18 UV photodiode 

UVC-only sensitivity compliant with DVGW W294 



TO18 hermetically sealed housing, PTB tested high chip stability 






also low, 10 10 - 




SG01S-C18 




Drawing 




SG01S-C5 



Properties of the SG01S-C5 UV photodiode 

UVC-only sensitivity according to DVGW W294 


TO5 hermetically sealed housing 







also low, 10 10 - 




SG01S-C5 




Drawing 




SG01S-18S 



Properties of the SG01S-18S UV photodiode 




TO18 hermetically sealed metal housing, short cap 






also low, 10 10 - 




SG01S-18S 




Drawing 




SG01D-18 



Properties of the SG01M-18 UV photodiode 

Broadband UVA+UVB+UVC, PTB tested high chip stability 




10μ/cm 2 peak radiation results a current of approx. 6,5 nA 





also low, 10 10 - 




SG01D-18 




Drawing 




SG01M-18 



Properties of the SG01M-18 UV photodiode 










also low, 10 10 - 




SG01M-18 




Drawing 




SG01M-E18 (ERYCA_custom) 

high precision UV-Index photodiode 


Properties of the ERYCA_custom photodiode 

DIN5050/ CIE087 UV-Index measurement with very small error < 3% 

TO18 hermetically sealed housing, 1 UVI (2,5 μW/cm2) 500 pA 

Information about the UV-Index (UVI) 

The UV index is an international standard measurement of how strong the ultraviolet (UV) 

radiation from the sun is at a particular place on a particular day. It is a scale primarily used in 

daily forecasts aimed at the general public. The UV-Index is calculated by integrating the 

sun’s UV spectrum multiplied with the Erythema action curve (fig. 1, black curve and fig. 2, 

formula 1). That integral is divided by 25 mW/m 2 to generate a convenient index value, which 

becomes essentially a scale of 0 to 10. The Erythema action curve is a wavelength resolved 

measure of the sunburn danger. It is maximised at 297nm (UVB) and then strongly decreases 

towards UVA radiation. Literature: A. F. McKinlay and B. L. Diffey, “A reference action 

spectrum for ultraviolet induced erythema in human skin” CIE Journal, 6-1, 17-22 (1987) 

About the sglux ERYCA sensors 

The ERYCA is designed for accurate measurement of the UV-Index. ERYCA’s error is



Fig. 1 Spectral Response 

Fig. 2 Calculation Formulae Fig. 3 Error Graph 

Fig. 4 Sun Spectra Issued by the Swiss Meteo Institute 






Specifications 

Parameter Symbol Value Unit 

Maximum Ratings 

Operating Temperature Range Topt -55 … +170 °C 

Storage Temperature Range Tstor -55 … +170 °C 

Soldering Temperature (3s) Tsold 260 °C 

Reverse voltage VRmax 20 V 

General Characteristics (T=25°C) 

Active Area A 0,20 mm 2 

Dark current (1V reverse bias) Id 1 fA 

Capacitance C 75 pF 

Short circuit (1 UVI) I0 500 pA 

Temperature coefficient Tc

SG01L-18 



Properties of the SG01L-18 UV photodiode 





10μW/cm 2 peak radiation results a current of approx. 12nA 





also low, 10 10 - 




SG01L-18 




Drawing 




SG01XL-5 



Properties of the SG01XL-5 UV photodiode 





1μW/cm 2 peak radiation results a current of approx. 5nA 





also low, 10 10 - 




SG01XL-5 



Circuit 

Drawing 

Viewing Angle 




AG28S 

UVC sensitive AlGaN based UV photodiode A = 0,076 mm 2 


Properties of the AG28S UV photodiode 

UVC sensitive photodiode 


TO18 metal housing 

10mW/cm 2 peak radiation results a current of approx. 240 nA 

About the material (Aluminium)Gallium Nitride (Al)GaN 

(Al)GaN is a new semiconductor material for visible blind UV photodiodes. By modification 

of the Al – to - Ga stoichiometry it is possible to produce photodiodes with different spectral 

behaviour. This allows to offer Photodiodes sensible for broad band UV (UVA+UVB+UVC), 

for UVB-only and for UVC only without using a filter. 





Storage Temperature Range Tstor 0 … +100 °C 







Short circuit (10mW/cm 2 at peak) I0 240 nA 

Temperature coefficient Tc 400nm) VB 10 3 - 

Rev. 3.1 Page 1 [2] 


(800)347-5445 or (617)566-3821; fax (617)731-0935; uv@boselec.com; www.boselec.com

AG28S 

UVC sensitive AlGaN based UV photodiode A = 0,076 mm 2 



Drawing 

Rev. 3.1 Page 2 [2] 


(800)347-5445 or (617)566-3821; fax (617)731-0935; uv@boselec.com; www.boselec.com

AG32S 

UVB sensitive AlGaN based UV photodiode A = 0,076 mm 2 



UVB sensitive photodiode 





















Temperature coefficient Tc 400nm) VB 10 3 - 

Rev. 3.1 Page 1 [2] 



AG32S 

UVB sensitive AlGaN based UV photodiode A = 0,076 mm 2 



Drawing 

Rev. 3.1 Page 2 [2] 



AG38S 

Broad Band (Al)GaN based UV photodiode A = 0,076 mm 2 



Broad Band UVA+UVB+UVC photodiode 





















Temperature coefficient Tc 400nm) VB >10 2 - 

Rev. 3.1 Page 1 [3] 



AG38S 

Broad Band (Al)GaN based UV photodiode A = 0,076 mm 2 



Drawing 

Rev. 3.1 Page 2 [3]

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