NIP REPORT January 2006- May 2007 - The UP College of Science ...

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“Optical Spectra of InAs Quantum Dots in InGaAs/GaAs Quantum wells” Second Semester, AY 06-07 Ph.D Florencio D. Recoleto PCASTRD Scholar “Optical Time Resolved Photoluminescence Studies of Semiconductor Heterostuctures” MS Mariel Grace Dimamay “Modeling the Photoluminescence Decay Response Characteristics of Oxide-Confined Vertical Surface-Emitting Lasers” Casco, Ma. Frantessa T "Molecular Beam Epitaxial Growth of InAs/InAlAs Quantum Wires on InP(001) Substrate LISTS OF PUBLICATIONS 1. F.D. Recoleto Jr., J.N. Mateo, M.G.S. Dimamay, A.S. Somintac, E.S. Estacio and A.A. Salvador, “Photoluminescence decay characteristics of an oxide-confined vertical cavity surface emitting laser”, Applied Physics Letters (February 2006) 2. E. Estacio, A. Quema, R. Pobre, G. Diwa, C. Ponseca, S. Ono, H. Maurakami, A. Somintac, J. Sy, V. Magusara, A. Salvador and N. Saruhara, “ Below bandgap excited terahertz emission of optically pumped GaAs/AlGaAs multiple quantum wells”, Journal of Photochemistry and Photobiology, Vol 183 #3, pp 334-337 , 2006. 3. A.T. Garcia, F.R. Ramos, A.A. Salvador, C. Boothroyd, H.H. Kim, and E. Philpott, Tailoring the Emission Characteristics of Indium Arsenide Quantum Dots by Varying the Arsenic Pressure, Proceedings of the 1 st International Workshop on Functional Materials and 3 rd International Workshop on Nanophysics and Nanotechnology (Halong, Vietnam December 2006) 4. C.M.N. Mateo, A.T. Garcia, F.R.M. Ramos, K.I. Manibog and A.A. Salvador, “Straininduced Splitting of the Valence-band in the Epitaxially lifted off GaAs on Silicon” Journal of Applied Physics 101, 073519 (April 2007) 2006 SPP Proceedings 1. V.K. Mag-usara, A.S. Somintac and A.A. Salvador, “Optical Spectra of InAs Quantum Dots in InGaAs/GaAs Quantum Wells”, 24th SPP Proceedings, oral presentation (Davao City, Philippines, October 2006). 2. J.V. Misa, M.F. Casco, V. K. Mag-usara and A. A. Salvador, “Fabrication and Characterization of InAlAs/InGaAs PIN structures Lattice-matched to (100) InP grown via Molecular Beam Epitaxy”, 24th SPP Proceedings, poster presentation (Davao City, Philippines, October 2006). 86
3 C.M.N. Mateo, A.T. Garcia, F.R.M. Ramos and A.A. Salvador, “Strain-induced valenceband splitting in the Epitaxially lifted off GaAs on Silicon”, 24th SPP Proceedings, poster presentation (Davao City, Philippines, October 2006) LISTS OF CONFERENCES 1. M. F. Casco, J. V. Misa, M. Defensor, A. Garcia and A. Salvador, “Surface Structure Dependent Growth of InAs/InAlAs Quantum Wires on InP(100) Substrate” Intl. Conf. on Materials for Advanced Technologies (July 2007) persons attended: Ma. Frantessa Casco and Alipio Garcia date: July 1-6, 2007 venue: Suntec Singapore International Convention & Exhibition Center, Singapore 2. J. V. Misa, M. F. Casco, A. Garcia and A. Salvador, “Control of the Surface Morphology of MBE-Grown InxAl1-xAs and InxGa1-x As Layers on InP Via Manipulation of In Content” Intl. Conf. on Materials for Advanced Technologies (July 2007) person attended: Ma. Frantessa Casco and Alipio Garcia date: July 1-6, 2007 venue: Suntec Singapore International Convention & Exhibition Center, Singapore PROJECTS Program for the Development of Devices and Integrated Circuits Suitable for RF Applications: Period: October 2005 – December 2006 (DOST/PCASTRD) Amount/Fund: PhP 8,020.372.80 This program aimed to produce GaAs-based field effect devices and millimeter wave integrated circuits (MMICs) suitable for RF applications. For the first phase of the project, the goal was to establish the protocols for the growth, fabrication and characterization of transistors and passive components. The wafers were grown by molecular beam epitaxy (MBE) and fabricated into High Electron Mobility Transistors (HEMTs) using the facility set up by the group. The new photolithographic masks used for the devices were specifically designed for RFtesting. The wafer and device optical and electrical characteristics were measured in-house, while their RF characteristics were extracted using the Network Analyzer facility (MicroLab Group, UP EEE Department) as potential calibration data for future devices. The Reactive Ion Etcher setup (Shono Laboratory, NEC) was also repaired for future use in high yield 1-µm gate FET device and airbridge fabrication. In addition to testing and calibration of the transistor devices, the group also explored other properties of GaAs-based layers. Induced strain in GaAs was observed using the Epitaxial Lift-Off (ELO), with changes in the heavy-hole and light-hole splitting observed through low temperature PL experiments. Variation in the growth parameters for quantum dots (QDs) was done to tailor their emission wavelengths. QDs were also incorporated into quantum wells (QWs) and phonon assisted optical transitions were observed in the electroluminescence spectra of these structures. Lattice-matched growth of InP-based devices was also optimized for future 87
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NIP REPORT January 2006- May 2007
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January 2006 -May 2007 NIP Report.
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Dr. Zenaida Domingo opted for early
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Report of the Deputy Director for A
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5th year 8 (13) 5 (7) 6th year 6 (4
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09:00 AM Dazo, Lorelie C. (BS Physi
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Adviser: Percival Almoro Co-adviser
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Old NIP Building, 3rd Pavilion, Pal
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“Characterization of the Penna Mo
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2. Claire Ann Nunez “A Variationa
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"Numerical Investigation of the Pho
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3. Limits 4. Gradients, vector alge
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List of NIP Publications in ISI Lis
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List of NIP ISI Publications (Jan-M
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List of NIP papers at the 2006 SPP
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14 Saloma, Caesar SPP2006139 Hologr
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14 Paz, Athena Evalour SPP2006132 P
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Page 41 and 42: List of OVCRD Thesis Writing Grants
Page 43 and 44: List of Externally Funded Projects
Page 45 and 46: • Maria Teresa R. Pulido. M.S •
Page 47 and 48: List of Honors and Awards Received
Page 49 and 50: Report of the Research Laboratories
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Page 59 and 60: Plasma Physics Laboratory ISI Publi
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Page 63 and 64: compounds (PFCs) emitted from the s
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Page 67 and 68: STRUCTURE AND DYNAMICS GROUP 2007 R
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Page 71 and 72: D. Variational Monte Carlo studies
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NIP REPORT January 2006- May 2007 - The UP College of Science ...

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