NIP REPORT January 2006- May 2007 - The UP College of Science ...

3 C.M.N. Mateo, A.T. Garcia, F.R.M. Ramos and A.A. Salvador, “Strain-induced valenceband
splitting in the Epitaxially lifted off GaAs on Silicon”, 24th SPP Proceedings,
poster presentation (Davao City, Philippines, October 2006)
LISTS OF CONFERENCES
1. M. F. Casco, J. V. Misa, M. Defensor, A. Garcia and A. Salvador, “Surface Structure
Dependent Growth of InAs/InAlAs Quantum Wires on InP(100) Substrate” Intl. Conf. on
Materials for Advanced Technologies (July 2007)
persons attended: Ma. Frantessa Casco and Alipio Garcia
date: July 1-6, 2007
venue: Suntec Singapore International Convention & Exhibition Center,
Singapore
2. J. V. Misa, M. F. Casco, A. Garcia and A. Salvador, “Control of the Surface Morphology
of MBE-Grown InxAl1-xAs and InxGa1-x As Layers on InP Via Manipulation of In
Content” Intl. Conf. on Materials for Advanced Technologies (July 2007)
person attended: Ma. Frantessa Casco and Alipio Garcia
date: July 1-6, 2007
venue: Suntec Singapore International Convention & Exhibition Center,
Singapore
PROJECTS
Program for the Development of Devices and Integrated Circuits Suitable for RF
Applications: Period: October 2005 – December 2006 (DOST/PCASTRD)
Amount/Fund: PhP 8,020.372.80
This program aimed to produce GaAs-based field effect devices and millimeter wave
integrated circuits (MMICs) suitable for RF applications. For the first phase of the project, the
goal was to establish the protocols for the growth, fabrication and characterization of transistors
and passive components. The wafers were grown by molecular beam epitaxy (MBE) and
fabricated into High Electron Mobility Transistors (HEMTs) using the facility set up by the
group. The new photolithographic masks used for the devices were specifically designed for RFtesting.
The wafer and device optical and electrical characteristics were measured in-house,
while their RF characteristics were extracted using the Network Analyzer facility (MicroLab
Group, UP EEE Department) as potential calibration data for future devices. The Reactive Ion
Etcher setup (Shono Laboratory, NEC) was also repaired for future use in high yield 1-µm gate
FET device and airbridge fabrication.
In addition to testing and calibration of the transistor devices, the group also explored
other properties of GaAs-based layers. Induced strain in GaAs was observed using the Epitaxial
Lift-Off (ELO), with changes in the heavy-hole and light-hole splitting observed through low
temperature PL experiments. Variation in the growth parameters for quantum dots (QDs) was
done to tailor their emission wavelengths. QDs were also incorporated into quantum wells
(QWs) and phonon assisted optical transitions were observed in the electroluminescence spectra
of these structures. Lattice-matched growth of InP-based devices was also optimized for future
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