Chapter 5: Carrier Transport Phenomena - FKE

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Microelectronics I The net mobility is given by 1 1 = µ µ L + 1 µ Due to phonon scattering Due to ionized ion scattering I
Microelectronics I Conductivity Drift current electron J drf n p σ; conductivity [(Ω.cm) -1 ] = e( µ n + µ p) E = σE hole σ = ( µ n + µ p) e n p Function of electron and hole concentrations and mobolities Ρ; resistivity [Ω.cm] 1 ρ = = σ 1 ( µ n + µ p) e n p
Page 1 and 2: Microelectronics I Chapter 5: Carri
Page 3 and 4: Microelectronics I + “Drift” Th
Page 5 and 6: Microelectronics I hole Ionized imp
Page 7 and 8: Microelectronics I Mobility is impo
Page 9 and 10: Microelectronics I electron hole
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Page 15 and 16: Microelectronics I Current density,
Page 17 and 18: Microelectronics I ex.; Consider co
Page 19 and 20: Microelectronics I Ex 2.; designing
Page 21 and 22: Microelectronics I Using trial and
Page 23 and 24: Microelectronics I Carrier diffusio
Page 25 and 26: Microelectronics I Total Current De
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Page 29 and 30: Microelectronics I The Hall effect
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Chapter 5: Carrier Transport Phenomena - FKE

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