Chapter 5: Carrier Transport Phenomena - FKE

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Microelectronics I Consider p-type semiconductor with an acceptor doping N a (N d=0) in which N a>>n i Assume complete ionization σ = ( µ n + µ p) ≈ eµ p e n p n σ ≈ eµ nN a 1 ≈ ρ Function of the majority carrier
Microelectronics I ex.; Consider compensated n-type Silicon at T=300 K with a conductivity of σ=16 (Ωcm) -1 and an acceptor doping concentration of 10 17 cm -3 . Determine the donor concentration and the electron mobility. Solution; At T=300 K, we can assume complete ionization. (N d-N a >>n i) σ ≈ eµ n = eµ ( N 16 = n ( 1. 6 × 10 n −19 d − N ) µ ( N n d a ) −10 To determine µn and Nd, we can use figure mobility vs. impurity concentration with trial and error 10 20 = µ n( Nd −10 17 ) 17 )
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Chapter 5: Carrier Transport Phenomena - FKE

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