Chapter 5: Carrier Transport Phenomena - FKE

More documents

Recommendations

Info

Microelectronics I Hole centration, p Hole flux Hole diffusion current density Position x J J px| dif px| dif = eD p = −eD ⎛ ⎜− ⎝ p dp dx dp dx D p; hole diffusion coefficient Diffusion coefficient; indicates how well carrier move as a result of density gradient. ⎞ ⎟ ⎠
Microelectronics I Total Current Density Electron drift current 1-D 3-D Total Current Density hole drift current Electron diffusion current J = J n| drf + J nx| dif + J p| drf + J px| dif dn J = enµ nE x + epµ pE x + eDn − eDp dx dp dx J = enµ nE + epµ pE + eDn∇n − eDp∇p hole diffusion current
Page 1 and 2: Microelectronics I Chapter 5: Carri
Page 3 and 4: Microelectronics I + “Drift” Th
Page 5 and 6: Microelectronics I hole Ionized imp
Page 7 and 8: Microelectronics I Mobility is impo
Page 9 and 10: Microelectronics I electron hole
Page 11 and 12: Microelectronics I
Page 13 and 14: Microelectronics I Conductivity Dri
Page 15 and 16: Microelectronics I Current density,
Page 17 and 18: Microelectronics I ex.; Consider co
Page 19 and 20: Microelectronics I Ex 2.; designing
Page 21 and 22: Microelectronics I Using trial and
Page 23: Microelectronics I Carrier diffusio
Page 27 and 28: Microelectronics I x E C E F E v Do
Page 29 and 30: Microelectronics I The Hall effect
Page 31 and 32: Microelectronics I For p-type For n

Chapter 5: Carrier Transport Phenomena - FKE

You also want an ePaper? Increase the reach of your titles

Delete template?

Save as template?