Chapter 5: Carrier Transport Phenomena - FKE

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Microelectronics I Drift current density, J drf (unit; A/cm 2 ) due to hole J = p| drf epv J p | drf = p dp eµ pE Drift current density due to electron Total drift current; J n | drf = n eµ nE J drf = n p e( µ n + µ p) E The sum of the individual electron and hole drift current densities
Microelectronics I Mobility is important parameter to determine the conductivity of material Mobility effects eτ cp p * mp µ = µ = n eτ m τ; mean time between collisions If τ=10 -15 s, in average, every 10 -15 s, carrier involves in collision @ scattering Two dominant scattering mechanism 1. Phonon or lattice scattering 2. Ionized scattering cn * n
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Page 3 and 4: Microelectronics I + “Drift” Th
Page 5: Microelectronics I hole Ionized imp
Page 9 and 10: Microelectronics I electron hole
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Page 15 and 16: Microelectronics I Current density,
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Page 31 and 32: Microelectronics I For p-type For n

Chapter 5: Carrier Transport Phenomena - FKE

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