Chapter 5: Carrier Transport Phenomena - FKE

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Microelectronics I If N d=2 x 10 17 cm -3 , impurity concentration, N I= N d + +Na - =3 x 10 17 cm -3 . from the figure, µn= 510 cm 2 /Vs. so σ=8.16 (Ωcm) -1 . If Nd=5 x 1017 cm-3 , impurity concentration, NI= N + d +Na - =6x 1017 cm-3 . from the figure, µn= 325 cm2 /Vs. so σ=20.8 (Ωcm) -1 cm . 2 /Vs. so σ=20.8 (Ωcm) -1 . N d should be between 2 x 10 17 and 5 x 10 17 cm -3 . after trial and error. Nd= 3.5 x 10 17 cm -3 µn=400 cm 2 /Vs σ= 16 (Ωcm) -1
Microelectronics I Ex 2.; designing a semiconductor resistor with a specified resistance to handle a given current density A Si semiconductor at T=300 K is initially doped with donors at a concentration of N d=5 x 10 15 cm -3 . Acceptors are to be added to form a compensated p-type material. The resistor is to have a resistance of 10 kΩ and handle a current density of 50 A/cm 2 when 5 V is applied. Solution; When 5 V is applied to 10 kΩ resistor, the current, I V 5 I = = = 0. 5mA 4 R 10 If the current density, J is limited to 50 A/cm 2 , the cross-sectional area, A is A = I J = 0. 5× 10 50 −3 = 10 −5 cm 2
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Chapter 5: Carrier Transport Phenomena - FKE

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